NST848BF3T5G NPN General Purpose Transistor The NST848BF3T5G device is a spin off of our popular SOT 23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT1123 NST848BF3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mA) V 30 V C (BR)CEO Collector Emitter Breakdown Voltage (I = 10 A, V = 0) V 30 V C EB (BR)CES V 30 V Collector Base Breakdown Voltage (I = 10 A) C (BR)CBO Emitter Base Breakdown Voltage (I = 1.0 A) V 5.0 V (BR)EBO E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 200 290 450 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 4.5 pF CB obo Input Capacitance (V = 0.5 V, I = 0 mA, f = 1.0 MHz) C 10 pF EB C ibo Noise Figure NF 10 dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S 0.18 600 150C (5.0 V) I /I = 10 C B 0.16 500 150C (1.0 V) 0.14 400 0.12 V = 150C CE(sat) 25C (5.0 V) 0.10 300 25C (1.0 V) 0.08 55C (5.0 V) 25C 200 0.06 55C (1.0 V) 100 0.04 55C 0 0.02 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current