NST856BF3T5G PNP General Purpose Transistor The NST856BF3T5G device is a spin off of our popular SOT 23/SOT323/SOT563/SOT963 threeleaded device. It is designed for general purpose amplifier applications and is housed in NST856BF3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mA) V 65 V C (BR)CEO Collector Emitter Breakdown Voltage (I = 10 A, V = 0) V 80 V C EB (BR)CES V 80 V Collector Base Breakdown Voltage (I = 10 A) C (BR)CBO Emitter Base Breakdown Voltage (I = 1.0 A) V 5.0 V (BR)EBO E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO Collector Cutoff Current (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 220 290 475 C CE Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.3 C B (I = 100 mA, I = 5.0 mA) 0.8 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.6 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 4.5 pF obo (V = 10 V, f = 1.0 MHz) CB Input Capacitance C 10 pF ibo (V = 0.5 V, I = 0 mA, f = 1.0 MHz) EB C Noise Figure NF 10 dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S 0.18 800 I /I = 10 150C (5.0 V) C B 0.16 700 0.14 600 V = 150C CE(sat) 150C (1.0 V) 0.12 500 25C (5.0 V) 0.10 400 25C 25C (1.0 V) 0.08 300 55C (5.0 V) 0.06 200 55C (1.0 V) 55C 0.04 100 0 0.02 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. Collector Emitter Saturation Voltage vs. Figure 2. DC Current Gain vs. Collector Current Collector Current