NSS20200LT1G, NSV20200LT1G 20 V, 4.0 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) www.onsemi.com transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) 20 VOLTS are designed for use in low voltage, high speed switching applications 4.0 AMPS where affordable efficient energy control is important. PNP LOW V TRANSISTOR CE(sat) Typical applications are DCDC converters and power management EQUIVALENT R 65 m DS(on) in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument 2 cluster. The high current gain allows e PowerEdge devices to be SOT23 (TO236) driven directly from PMUs control outputs, and the Linear Gain CASE 318 (Beta) makes them ideal components in analog amplifiers. STYLE 6 Features COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable BASE These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 2 EMITTER MARKING DIAGRAM VC M 1 VC = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping NSS20200LT1G SOT23 3,000 / (PbFree) Tape & Reel NSV20200LT1G SOT23 3,000 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: October, 2016 Rev. 5 NSS20200L/DNSS20200LT1G, NSV20200LT1G MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit Collector-Emitter Voltage V 20 Vdc CEO Collector-Base Voltage V 20 Vdc CBO Emitter-Base Voltage V 7.0 Vdc EBO Collector Current Continuous I 2.0 A C Collector Current Peak I 4.0 A CM Electrostatic Discharge ESD HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 460 mW A Derate above 25C 3.7 mW/C Thermal Resistance, R (Note 1) C/W JA JunctiontoAmbient 270 Total Device Dissipation P (Note 2) D T = 25C 540 mW A Derate above 25C 4.3 mW/C Thermal Resistance, R (Note 2) C/W JA JunctiontoAmbient 230 Total Device Dissipation P mW Dsingle (Single Pulse < 10 sec.) (Note 3) 710 Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm , 1 oz. copper traces. 2 2. FR4 500 mm , 1 oz. copper traces. 3. Thermal response. www.onsemi.com 2