LOT No. LOT No. NSVJ5908DSG5 N-Channel JFET, -15 V, 10 to 32 mA, 35 ms, Dual Automotive JFET designed for compact and efficient designs and including high gain performance. AECQ101 qualified JFET and PPAP capable suitable for automotive applications. www.onsemi.com Features Large yfs ELECTRICAL CONNECTION Small Ciss NChannel This Small Package Enables Sets to be Smaller and Thinner 54 Ultralow Noise Figure 1: Drain1 MCPH5 Package is Pin-compatible with SC88AFL 2: Source1/Source2 Composite Type with 2 JFET Contained in a MCPH5 Package 3: Drain 2 Currently in Use, Improving the Mounting Efficiency Greatly 4: Gate2 5: Gate1 The NSVJ5908DSG5 is Formed with Two Chips, Being Equivalent 1 2 3 to the NSVJ3557SA3, Placed in One Package NSV Prefix for Automotive and Other Applications Requiring 5 Unique Site and Control Change Requirements 4 AECQ101 Qualified and PPAP Capable 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 2 3 Compliant SC88AFL/MCPH5 CASE 419AP Typical Applications AM Tuner RF Amplification MARKING DIAGRAM Low Noise Amplifier SPECIFICATIONS K ABSOLUTE MAXIMUM RATINGS (T = 25C) A Parameter Symbol Value Unit Drain-to-Source Voltage V 15 V DSX Gate-to-Drain Voltage V 15 V GDS K = Specific Device Code Gate Current I 10 mA G ORDERING INFORMATION Drain Current I 50 mA D See detailed ordering and shipping information on page 2 of Allowable Power Dissipation 1 unit P 200 mW D this data sheet. Total Power Dissipation P 300 mW T Operating Junction and T T 55 to +150 C J, Stg Storage Temperature Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2019 Rev. 0 NSVJ5908DSG5/DNSVJ5908DSG5 Table 1. ELECTRICAL CHARACTERISTICS (T = 25C) A Parameter Symbol Conditions Min Typ Max Unit Gate-to-Drain Breakdown V I = 10 A, V = 0 V 15 V (BR)GDS G DS Voltage Gate-to-Source Leakage I V = 10 V, V = 0 V 1.0 nA GSS GS DS Current Cutoff Voltage V V = 5 V, I = 100 A 0.3 0.7 1.5 V GS(off) DS D Zero-Gate Voltage Drain Current I V = 5 V, V = 0 V 10 32 mA DSS DS GS Forward Transfer Admittance yfs V = 5 V, V = 0 V, f = 1 kHz 24 35 mS DS GS Input Capacitance Ciss V = 5 V, V = 0 V, f = 1 MHz 10.5 pF DS GS Reverse Transfer Capacitance Crss 3.5 pF Noise Figure NF V = 5 V, Rg = 1 k , I = 1 mA, f = 1 kHz 1.0 dB DS D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTE: The specifications shown above are for each individual JFET. ORDERING INFORMATION Device Marking Package Type Shipping NSVJ5908DSG5T1G K SC88AFL / MCPH5 3,000 / Tape & Reel (PbFree / Halogen Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2