Product Information

LPM3406B3F

LPM3406B3F electronic component of LOWPOWER

Datasheet
Junction Field-Effect Transistor,JFET SOT-23-3 RoHS

Manufacturer: LOWPOWER
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0526 ea
Line Total: USD 0.526

1561 - Global Stock
Ships to you between
Thu. 11 Apr to Tue. 16 Apr
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1202 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10

Stock Image

LPM3406B3F
LOWPOWER

10 : USD 0.045
100 : USD 0.0398
300 : USD 0.0372
3000 : USD 0.0352
6000 : USD 0.0338
9000 : USD 0.0329

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
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The LPM3406B3F with Junction Field-Effect Transistor (JFET) SOT-23-3 RoHS manufactured by LOWPOWER is a high-precision monolithic JFET integrated circuit optimized for low power applications. It is capable of biasing resistors and capacitors without requiring external components, resulting in a low-power, self-contained switching solution. The LPM3406B3F features a complete N-channel depletion-mode JFET in a plastic SOT-23-3 small outline package. It has a drain-to-source breakdown voltage of 4V, an operating temperature range from -40°C to 125°C, a maximum supply current of 500 µA, and an on-resistance of 34 ohms. This part is suitable for applications such as driving LEDs, driving small motors, and regulating current in communication systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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