Product Information

NTB25P06T4G

NTB25P06T4G electronic component of ON Semiconductor

Datasheet
P-Channel 60 V 27.5A (Ta) 120W (Tj) Surface Mount D²PAK

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

332: USD 1.1693 ea
Line Total: USD 388.21

0 - Global Stock
MOQ: 332  Multiples: 332
Pack Size: 332
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 800
Multiples : 800

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NTB25P06T4G
ON Semiconductor

800 : USD 1.5283
1600 : USD 1.4162
2400 : USD 1.3501
4800 : USD 1.3398
5600 : USD 1.3027

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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NTB25P06T4G
ON Semiconductor

1 : USD 2.5587
10 : USD 2.4639

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 800
Multiples : 800

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NTB25P06T4G
ON Semiconductor

800 : USD 1.8381
1600 : USD 1.462
2400 : USD 1.3612
5600 : USD 1.3108

0 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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NTB25P06T4G
ON Semiconductor

1 : USD 3.1
10 : USD 2.6724
100 : USD 2.1477

0 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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NTB25P06T4G
ON Semiconductor

1 : USD 3.1
10 : USD 2.6724
100 : USD 2.1477

0 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 800
Multiples : 800

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NTB25P06T4G
ON Semiconductor

800 : USD 1.5359
1600 : USD 1.4745
2400 : USD 1.4745
3200 : USD 1.4745

0 - WHS 7


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 800
Multiples : 800

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NTB25P06T4G
ON Semiconductor

800 : USD 1.3648

0 - WHS 8


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 332
Multiples : 332

Stock Image

NTB25P06T4G
ON Semiconductor

332 : USD 1.1693

0 - WHS 9


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

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NTB25P06T4G
ON Semiconductor

1 : USD 3.2109
10 : USD 2.7545
30 : USD 2.4686
100 : USD 2.1739
500 : USD 2.0432
800 : USD 1.9855

0 - WHS 10


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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NTB25P06T4G
ON Semiconductor

1 : USD 6.598
10 : USD 2.3828
25 : USD 2.2439
100 : USD 1.9126
500 : USD 1.5707
800 : USD 1.2928
2400 : USD 1.2608

0 - WHS 11


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 7
Multiples : 1

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NTB25P06T4G
ON Semiconductor

7 : USD 2.5804

0 - WHS 12


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 7
Multiples : 1

Stock Image

NTB25P06T4G
ON Semiconductor

7 : USD 2.3449
10 : USD 2.2128

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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NTB25P06, NVB25P06 MOSFET P-Channel, 2 D PAK -60 V, -27.5 A Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. NTB25P06, NVB25P06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V V (BR)DSS (V = 0 V, I = 250 A) 60 GS D mV/C (Positive Temperature Coefficient) 64 Zero Gate Voltage Drain Current I A DSS (V = 0 V, V = 60 V, T = 25C) 10 GS DS J (V = 0 V, V = 60 V, , T = 150C) 100 GS DS J GateBody Leakage Current (V = 15 V, V = 0 V) I 100 nA GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V GS(th) (V = V I = 250 A) 2.0 2.8 4.0 DS GS, D mV/C (Negative Threshold Temperature Coefficient) 6.2 Static DrainSource OnState Resistance R DS(on) (V = 10 V, I = 12.5 A) 0.065 0.075 GS D (V = 10 V, I = 25 A) 0.070 0.082 GS D Forward Transconductance gFS Mhos (V = 10 V, I = 12.5 A) 13 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 1200 1680 pF iss (V = 25 V, V = 0 V, DS GS Output Capacitance C 345 480 oss F = 1.0 MHz) Reverse Transfer Capacitance C 90 180 rss SWITCHING CHARACTERISTICS (Notes 3 & 4) TurnOn Delay Time t 14 24 ns d(on) Rise Time t 72 118 ns r (V = 30 V, I = 25 A, DD D V = 10 V R = 9.1 ) GS G TurnOff Delay Time t 43 68 ns d(off) Fall Time t 190 320 ns f Gate Charge Q 33 50 nC T (V = 48 V, I = 25 A, DS D Q 6.5 1 V = 10 V) GS Q 15 2 BODYDRAIN DIODE RATINGS (Note 3) Diode Forward OnVoltage (I = 25 A, V = 0 V) V 1.8 2.5 V S GS SD (I = 25 A, V = 0 V, T = 150C) 1.4 S GS J Reverse Recovery Time t 70 ns rr (I = 25 A, V = 0 V, S GS t 50 a dI /dt = 100 A/ s) S t 20 b Reverse Recovery Stored Charge Q 0.2 C RR 3. Indicates Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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