NTB5605P, NTBV5605 MOSFET Power, 2 P-Channel, D PAK -60 V, -18.5 A Features NTB5605P, NTBV5605 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (Br)DSS GS D DraintoSource Breakdown Voltage V /T 64 mV/C (Br)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V T = 25C 1.0 A DSS GS J V = 60 V T = 125C 10 DS J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.5 2.0 V GS(th) GS DS D DraintoSource On Resistance R V = 5.0 V, I = 8.5 A 120 140 m DS(on) GS D V = 5.0 V, I = 17 A 140 GS D Forward Transconductance g V = 10 V, I = 8.5 A 12 S FS DS D DraintoSource On Voltage V V = 5.0 V, I = 8.5 A 1.3 V DS(on) GS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 730 1190 iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 211 300 pF oss V = 25 V DS Reverse Transfer Capacitance C 67 120 rss Total Gate Charge Q 13 22 G(TOT) V = 5.0 V, V = 48 V, GS DS GatetoSource Charge Q 4.0 nC GS I = 17 A D GatetoDrain Charge Q 7.0 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 12.5 25 d(on) Rise Time t 122 183 r V = 5.0 V, V = 30 V, GS DD ns I = 17 A, R = 9.1 D G TurnOff Delay Time t 29 58 d(off) Fall Time t 75 150 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 1.55 2.5 V SD J V = 0 V GS I = 17 A S T = 125C 1.4 J Reverse Recovery Time t 60 rr Charge Time t 39 ns a V = 0 V, dI /dt = 100 A/ s, GS S I = 17 A S Discharge Time t 21 b Reverse Recovery Charge Q 0.14 nC RR 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.