NTD25P03L ON Semiconductor

NTD25P03L, STD25P03L MOSFET Power, P-Channel, Logic Level, DPAK -25 A, -30 V NTD25P03L, STD25P03L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V V (BR)DSS 30 (V = 0 Vdc, I = 250 A) GS D 24 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I A DSS 1.0 (V = 30 Vdc, V = 0 Vdc, T = 25C) DS GS J 100 (V = 30 Vdc, V = 0 Vdc, T = 125C) DS GS J GateBody Leakage Current I nA GSS 100 (V = 15 Vdc, V = 0 Vdc) GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V GS(th) 1.0 1.6 2.0 (V = V , I = 250 Adc) DS GS D 4.0 mV/C Temperature Coefficient (Negative) Static DraintoSource OnState Resistance R DS(on) 0.051 0.072 (V = 5.0 Vdc, I = 12.5 Adc) GS D 0.056 0.080 (V = 5.0 Vdc, I = 25 Adc) GS D 0.065 0.090 (V = 4.0 Vdc, I = 10 Adc) GS D Forward Transconductance g Mhos FS 13 (V = 8.0 Vdc, I = 12.5 Adc) DS D DYNAMIC CHARACTERISTICS Input Capacitance C 900 1260 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 290 410 oss f = 1.0 MHz) Reverse Transfer Capacitance C 105 210 rss SWITCHING CHARACTERISTICS (Notes 3 & 4) TurnOn Delay Time t 9.0 20 ns d(on) (V = 15 Vdc, I = 25 A, Rise Time DD D t 37 75 r V = 5.0 V, GS TurnOff Delay Time t 15 30 R = 1.3 ) d(off) G Fall Time t 16 55 f Gate Charge Q 15 20 nC T (V = 24 Vdc, Q 3.0 DS 1 V = 5.0 Vdc, GS Q 9.0 I = 25 A) 2 D Q 7.0 3 BODYDRAIN DIODE RATINGS (Note 3) Diode Forward OnVoltage (I = 25 Adc, V = 0 V) V 1.0 1.5 V S GS SD (I = 25 Adc, V = 0 V, T = 125C) 0.9 S GS J Reverse Recovery Time t 35 ns rr (I = 25 A, V = 0 V, S GS t 20 a dI /dt = 100 A/ s) S t 14 b Reverse Recovery Stored Charge Q 0.035 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature.