Product Information

NTD3055L104G

NTD3055L104G electronic component of ON Semiconductor

Datasheet
MOSFET 60V 12A N-Channel

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.31 ea
Line Total: USD 0.31

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

NTD3055L104G
ON Semiconductor

1 : USD 0.31
5 : USD 0.3042
50 : USD 0.2808
250 : USD 0.2398
1000 : USD 0.22
2500 : USD 0.2152

0 - WHS 2


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 1336
Multiples : 1

Stock Image

NTD3055L104G
ON Semiconductor

1336 : USD 0.2366

0 - WHS 3


Ships to you between Wed. 08 May to Tue. 14 May

MOQ : 29
Multiples : 1

Stock Image

NTD3055L104G
ON Semiconductor

29 : USD 0.8554

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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NTD3055L104, NTDV3055L104 Power MOSFET 12 A, 60 V, Logic Level NChannel DPAK/IPAK Designed for low voltage, high speed switching applications in NTD3055L104, NTDV3055L104 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 70 GS D Temperature Coefficient (Positive) 62.9 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.6 2.0 DS GS D 4.2 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 5.0 Vdc, I = 6.0 Adc) 89 104 GS D Static DraintoSource OnVoltage (Note 3) V Vdc DS(on) (V = 5.0 Vdc, I = 12 Adc) 0.98 1.50 GS D (V = 5.0 Vdc, I = 6.0 Adc, T = 150C) 0.86 GS D J Forward Transconductance (Note 3) (V = 8.0 Vdc, I = 6.0 Adc) g 9.1 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 316 440 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 105 150 oss f = 1.0 MHz) Transfer Capacitance C 35 70 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.2 20 ns d(on) Rise Time t 104 210 (V = 30 Vdc, I = 12 Adc, r DD D V = 5.0 Vdc, R = 9.1 ) (Note 3) TurnOff Delay Time GS G t 19 40 d(off) Fall Time t 40.5 80 f Gate Charge Q 7.4 20 nC T (V = 48 Vdc, I = 12 Adc, DS D Q 2.0 1 V = 5.0 Vdc) (Note 3) GS Q 4.0 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 12 Adc, V = 0 Vdc) (Note 3) V 0.95 1.2 Vdc S GS SD (I = 12 Adc, V = 0 Vdc, T = 150C) 0.82 S GS J Reverse Recovery Time t 35 ns rr (I = 12 Adc, V = 0 Vdc, S GS t 21 a dI /dt = 100 A/ s) (Note 3) S t 14 b Reverse Recovery Stored Charge Q 0.04 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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