NTD3055L104-1G ON Semiconductor

NTD3055L104-1G electronic component of ON Semiconductor
NTD3055L104-1G ON Semiconductor
NTD3055L104-1G MOSFETs
NTD3055L104-1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NTD3055L104-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD3055L104-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTD3055L104-1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 60V 12A N-Channel
Datasheet: NTD3055L104-1G Datasheet (PDF)
Price (USD)
35: USD 0.5798 ea
Line Total: USD 20.29 
Availability : 0
  
QtyUnit Price
35$ 0.5798
100$ 0.3424
1000$ 0.2404

Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.313


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 75
Multiples : 75
QtyUnit Price
75$ 0.2763
1800$ 0.2462


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 36.3841


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1191
Multiples : 1
QtyUnit Price
1191$ 0.2738


Availability 0
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.0893
10$ 1.0112
75$ 0.5627
525$ 0.4446
1050$ 0.3555
2400$ 0.3231
4800$ 0.3131


Availability 0
Ship by Mon. 29 Sep
MOQ : 10
Multiples : 1
QtyUnit Price
10$ 1.3406
25$ 0.6703
50$ 0.6033
75$ 0.5027
100$ 0.4525


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 2400
Multiples : 2400
QtyUnit Price
2400$ 0.2993


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 2400
Multiples : 2400
QtyUnit Price
2400$ 0.2993


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 86
Multiples : 1
QtyUnit Price
86$ 0.3365
250$ 0.323
1000$ 0.323


Availability 0
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8916
3$ 0.3726
10$ 0.3294
21$ 0.2658
96$ 0.2535


Availability 0
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 35
Multiples : 1
QtyUnit Price
35$ 0.5798
100$ 0.3424
1000$ 0.2404

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
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Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD3055L104-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD3055L104-1G and other electronic components in the MOSFETs category and beyond.

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NTD3055L104, NTDV3055L104 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power www.onsemi.com supplies, converters and power motor controls and bridge circuits. Features V R TYP I MAX (BR)DSS DS(on) D Lower R DS(on) 60 V 104 m 12 A Lower V DS(on) Tighter V Specification SD D Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV and STDV Prefixes for Automotive and Other Applications NChannel Requiring Unique Site and Control Change Requirements G AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant S Typical Applications 4 Power Supplies Converters 4 Power Motor Controls Bridge Circuits 1 2 1 2 3 3 MAXIMUM RATINGS (T = 25C unless otherwise noted) J DPAK IPAK Rating Symbol Value Unit CASE 369C CASE 369D DraintoSource Voltage V 60 Vdc DSS STYLE 2 STYLE 2 DraintoGate Voltage (R = 10 M ) V 60 Vdc GS DGR MARKING DIAGRAMS GatetoSource Voltage, Continuous V 15 Vdc GS NonRepetitive (t 10 ms) V 20 & PIN ASSIGNMENTS p GS Drain Current 4 4 Continuous T = 25C I 12 Adc Drain Drain A D Continuous T = 100C I 10 A D I 45 Apk Single Pulse (t 10 s) p DM Total Power Dissipation T = 25C P 48 W A D Derate above 25C 0.32 W/C Total Power Dissipation T = 25C (Note 1) 2.1 W A Total Power Dissipation T = 25C (Note 2) 1.5 W A 2 1 3 Operating and Storage Temperature Range T , T 55 to C Drain J stg Gate Source +175 1 2 3 Gate Drain Source Single Pulse DraintoSource Avalanche E 61 mJ AS Energy Starting T = 25C J A = Assembly Location* (V = 25 Vdc, V = 5.0 Vdc, L = 1.0 mH DD GS 55L104 = Device Code I = 11 A, V = 60 Vdc) L(pk) DS Y = Year Thermal Resistance, JunctiontoCase R 3.13 C/W JC WW = Work Week JunctiontoAmbient (Note 1) R 71.4 JA G = PbFree Package JunctiontoAmbient (Note 2) R 100 JA * The Assembly Location code (A) is front side Maximum Lead Temperature for Soldering T 260 C L optional. In cases where the Assembly Location is Purposes, 1/8 from case for 10 seconds stamped in the package, the front side assembly Stresses exceeding those listed in the Maximum Ratings table may damage the code may be blank. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size, ORDERING INFORMATION 2 (Cu Area 1.127 in ). See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 10 NTD3055L104/D AYWW 55L 104G AYWw 55L 104GNTD3055L104, NTDV3055L104 2. When surface mounted to an FR4 board using the minimum recommended 2 pad size, (Cu Area 0.412 in ). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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