NTD4805N, NVD4805N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 88 A Features NTD4805N, NVD4805N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 1.9 C/W JC JunctiontoTAB (Drain) R 3.5 JC TAB JunctiontoAmbient Steady State (Note 1) R 56.6 JA JunctiontoAmbient Steady State (Note 2) R 106.6 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 27 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.86 mV/C GS(TH) J DraintoSource On Resistance R V = 10 to I = 30 A 4.3 5.0 m DS(on) GS D 11.5 V I = 15 A 4.2 D V = 4.5 V I = 30 A 6.0 7.4 GS D I = 15 A 5.8 D Forward Transconductance g V = 15 V, I = 15 A 17 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 2865 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 610 oss V = 12 V DS Reverse Transfer Capacitance C 338 rss Total Gate Charge Q 20.5 26 nC G(TOT) Threshold Gate Charge Q 4.05 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 8.28 GS GatetoDrain Charge Q 8.36 GD Total Gate Charge Q V = 11.5 V, V = 15 V, 48 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 17.2 ns d(on) Rise Time t 20.3 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 20.8 d(off) Fall Time t 8.0 f TurnOn Delay Time t 10.8 ns d(on) Rise Time t 20.5 r V = 11.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 30.8 d(off) Fall Time t 4.4 f