NTD4815N
Power MOSFET
30 V, 35 A, Single NChannel, DPAK/IPAK
Features
Low R to Minimize Conduction Losses
DS(on)
Low Capacitance to Minimize Driver Losses
NTD4815N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
C/W
Junction toCase (Drain) R 4.6
JC
Junction toTAB (Drain) R 3.5
JC TAB
JunctiontoAmbient Steady State (Note 1) R 78
JA
JunctiontoAmbient Steady State (Note 2) R 119
JA
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surface mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V / 25
(BR)DSS
mV/C
Temperature Coefficient T
J
Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1
DSS GS J
V = 24 V A
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V
GS(TH) GS DS D
Negative Threshold Temperature V /T 5.6
GS(TH) J
mV/C
Coefficient
DraintoSource On Resistance R V = 10 V to I = 30 A 12 15
DS(on) GS
D
11.5 V
I = 15 A 11.5
D
m
V = 4.5 V
I = 30 A 21 25
GS D
I = 15 A 18.3
D
Forward Transconductance g V = 15 V, I = 10 A 6.0 S
FS DS D
CHARGES AND CAPACITANCES
Input Capacitance C 770
ISS
Output Capacitance C 181
V = 0 V, f = 1.0 MHz, V = 12 V pF
OSS
GS DS
Reverse Transfer Capacitance C 108
RSS
Total Gate Charge Q 6.0 6.6
G(TOT)
Threshold Gate Charge Q 0.9
G(TH)
V = 4.5 V, V = 15 V; I = 30 A nC
GS DS D
GatetoSource Charge Q 2.5
GS
GatetoDrain Charge Q 3.1
GD
Total Gate Charge Q V = 11.5 V, V = 15 V; 14.1 nC
G(TOT) GS DS
I = 30 A
D
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time t 10.5
d(ON)
Rise Time t 21.4
r
V = 4.5 V, V = 15 V, I = 15 A,
GS DS D
ns
R = 3.0
G
Turn Off Delay Time t 11.4
d(OFF)
Fall Time t 3.5
f
3. Pulse Test: pulse width 300 s, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.