Product Information

NTD4909NT4G

NTD4909NT4G electronic component of ON Semiconductor

Datasheet
MOSFET NFET DPAK 30V 41A 8.0 mOhm

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

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NTD4909NT4G
ON Semiconductor

2500 : USD 0.2566
5000 : USD 0.2372
10000 : USD 0.2293
25000 : USD 0.2177
50000 : USD 0.2121
N/A

Obsolete
0 - WHS 2

MOQ : 2500
Multiples : 2500

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NTD4909NT4G
ON Semiconductor

2500 : USD 0.2642
5000 : USD 0.2386
12500 : USD 0.2301
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

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NTD4909NT4G
ON Semiconductor

1 : USD 0.7132
10 : USD 0.6118
25 : USD 0.571
100 : USD 0.4241
500 : USD 0.3312
1000 : USD 0.2692
N/A

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0 - WHS 4


Multiples : 1

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NTD4909NT4G
ON Semiconductor

N/A

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0 - WHS 5

MOQ : 1259
Multiples : 1

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NTD4909NT4G
ON Semiconductor

1259 : USD 0.2589
N/A

Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1

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NTD4909NT4G
ON Semiconductor

1 : USD 1.8358
10 : USD 0.8748
100 : USD 0.4524
500 : USD 0.3844
1000 : USD 0.3354
2500 : USD 0.3075
5000 : USD 0.2986
N/A

Obsolete
0 - WHS 7

MOQ : 105
Multiples : 1

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NTD4909NT4G
ON Semiconductor

105 : USD 0.1972
N/A

Obsolete
0 - WHS 8

MOQ : 37
Multiples : 1

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NTD4909NT4G
ON Semiconductor

37 : USD 0.6763
50 : USD 0.2917
100 : USD 0.2298
250 : USD 0.2298
N/A

Obsolete
0 - WHS 9

MOQ : 37
Multiples : 1

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NTD4909NT4G
ON Semiconductor

37 : USD 0.3256
100 : USD 0.2661
250 : USD 0.2415
500 : USD 0.2367
1000 : USD 0.2367
3000 : USD 0.2367
N/A

Obsolete
0 - WHS 10

MOQ : 5000
Multiples : 5000

Stock Image

NTD4909NT4G
ON Semiconductor

5000 : USD 0.2736
N/A

Obsolete
0 - WHS 11

MOQ : 2500
Multiples : 2500

Stock Image

NTD4909NT4G
ON Semiconductor

2500 : USD 0.2268
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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NTD4909N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 41 A Features Low R to Minimize Conduction Losses NTD4909N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.1 C/W JC JunctiontoTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.2 JA JunctiontoAmbient Steady State (Note 4) R 110 JA 3. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS V = 0 V, J GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.7 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 6.5 8.0 m DS(on) GS D I = 15 A 6.5 D V = 4.5 V I = 30 A 9.5 12 GS D I = 15 A 9.5 D Forward Transconductance gFS V = 1.5 V, I = 30 A 52 S DS D CHARGES AND CAPACITANCES Input Capacitance C 1314 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 487 oss V = 15 V DS Reverse Transfer Capacitance C 17.4 rss nC Total Gate Charge Q 7.6 G(TOT) Threshold Gate Charge Q 2.1 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 4.3 GS GatetoDrain Charge Q 1.3 GD Total Gate Charge Q V = 10 V, V = 15 V, 17.5 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 21 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 17 d(off) Fall Time t 2.7 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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