NTD4909NT4G ON Semiconductor

NTD4909NT4G electronic component of ON Semiconductor
NTD4909NT4G ON Semiconductor
NTD4909NT4G MOSFETs
NTD4909NT4G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTD4909NT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD4909NT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NTD4909NT4G
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:MOSFET NFET DPAK 30V 41A 8.0 mOhm
Datasheet:NTD4909NT4G Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
N/A

Obsolete

Availability0
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.2764
5000$ 0.2555
10000$ 0.247
25000$ 0.2344
50000$ 0.2284
N/A

Obsolete

Availability0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.977
10$ 0.9421
100$ 0.4872
500$ 0.414
1000$ 0.3612
2500$ 0.3312
5000$ 0.3216
N/A

Obsolete

Availability0
MOQ : 105
Multiples : 1
QtyUnit Price
105$ 0.2124
N/A

Obsolete

Availability0
MOQ : 37
Multiples : 1
QtyUnit Price
37$ 0.7283
50$ 0.3142
100$ 0.2475
250$ 0.2475
N/A

Obsolete

Availability0
MOQ : 37
Multiples : 1
QtyUnit Price
37$ 0.3506
100$ 0.2866
250$ 0.26
500$ 0.2549
1000$ 0.2549
3000$ 0.2549
N/A

Obsolete

Availability0
MOQ : 5000
Multiples : 5000
QtyUnit Price
5000$ 0.2946
N/A

Obsolete

Availability0
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.2442
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTD4909NT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD4909NT4G and other electronic components in the MOSFETs category and beyond.

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NTD4909N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 41 A Features Low R to Minimize Conduction Losses NTD4909N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.1 C/W JC JunctiontoTAB (Drain) R 4.3 JC TAB JunctiontoAmbient Steady State (Note 3) R 58.2 JA JunctiontoAmbient Steady State (Note 4) R 110 JA 3. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 4. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS V = 0 V, J GS V = 24 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.7 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.0 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 6.5 8.0 m DS(on) GS D I = 15 A 6.5 D V = 4.5 V I = 30 A 9.5 12 GS D I = 15 A 9.5 D Forward Transconductance gFS V = 1.5 V, I = 30 A 52 S DS D CHARGES AND CAPACITANCES Input Capacitance C 1314 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 487 oss V = 15 V DS Reverse Transfer Capacitance C 17.4 rss nC Total Gate Charge Q 7.6 G(TOT) Threshold Gate Charge Q 2.1 G(TH) V = 4.5 V, V = 15 V, GS DS I = 30 A D GatetoSource Charge Q 4.3 GS GatetoDrain Charge Q 1.3 GD Total Gate Charge Q V = 10 V, V = 15 V, 17.5 nC G(TOT) GS DS I = 30 A D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 11 ns d(on) Rise Time t 21 r V = 4.5 V, V = 15 V, GS DS I = 15 A, R = 3.0 D G TurnOff Delay Time t 17 d(off) Fall Time t 2.7 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. 7. Assume terminal length of 110 mils.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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