NTD5867NL-1G ON Semiconductor

NTD5867NL-1G electronic component of ON Semiconductor
NTD5867NL-1G ON Semiconductor
NTD5867NL-1G MOSFETs
NTD5867NL-1G  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of NTD5867NL-1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD5867NL-1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.NTD5867NL-1G
Manufacturer:ON Semiconductor
Category:MOSFETs
Description:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) IPAK Rail
Datasheet:NTD5867NL-1G Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
63: USD 0.5138 ea
Line Total: USD 32.37 
Availability : 0
  
QtyUnit Price
63$ 0.5138
100$ 0.297
  

Availability0
Ship by Wed. 24 Jun to Tue. 30 Jun
MOQ : 63
Multiples : 1
QtyUnit Price
63$ 0.5138
100$ 0.297

   
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Continuous Drain Current
Gate-Source Voltage Max
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Rad Hardened
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We are delighted to provide the NTD5867NL-1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD5867NL-1G and other electronic components in the MOSFETs category and beyond.

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NTD5867NL N-Channel Power MOSFET 60 V, 20 A, 39 m Features Low R DS(on) High Current Capability NTD5867NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 60 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 60 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 1.5 1.8 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.2 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V, I = 10 A 26 39 m DS(on) GS D V = 4.5 V, I = 10 A 33 50 GS D Forward Transconductance g V = 15 V, I = 10 A 8.0 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 675 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 68 oss V = 25 V DS Reverse Transfer Capacitance C 47 rss nC Total Gate Charge Q 15 G(TOT) Threshold Gate Charge Q 1.0 G(TH) V = 10 V, V = 48 V, GS DS I = 20 A GatetoSource Charge Q D 2.2 GS GatetoDrain Charge Q 4.3 GD Total Gate Charge Q V = 4.5 V, V = 48 V, 7.6 nC G(TOT) GS DS I = 20 A D Gate Resistance R 1.3  G SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 6.5 ns d(on) Rise Time t 12.6 r V = 10 V, V = 48 V, GS DD I = 20 A, R = 2.5  TurnOff Delay Time t D G 18.2 d(off) Fall Time t 2.4 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.87 1.2 V SD J V = 0 V, GS I = 10 A S T = 100C 0.78 J Reverse Recovery Time t 17 ns RR Charge Time ta 13 V = 0 V, dIs/dt = 100 A/s, GS I = 20 A Discharge Time tb S 4.0 Reverse Recovery Charge Q 12 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Order Number Package Shipping NTD5867NL1G IPAK (Straight Lead) 75 Units / Rail (PbFree) NTD5867NLT4G DPAK 2500 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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