NTD6416ANT4G ON Semiconductor

MOSFET Power, N-Channel 100 V, 17 A, 81 m NTD6416AN, NVD6416AN Features Low R DS(on) NTD6416AN, NVD6416AN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 112 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 100 V DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 7.7 mV/C GS(TH) J Coefficient DraintoSource OnResistance R V = 10 V, I = 17 A 73 81 m DS(on) GS D Forward Transconductance g V = 5 V, I = 10 A 12 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 620 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 25 V 110 OSS GS DS Reverse Transfer Capacitance C 50 RSS Total Gate Charge Q 20 nC G(TOT) Threshold Gate Charge Q 1.0 G(TH) GatetoSource Charge Q 3.6 V = 10 V, V = 80 V, I = 17 A GS GS DS D GatetoDrain Charge Q 10 GD Plateau Voltage V 5.8 V GP Gate Resistance R 2.4 G SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.2 ns d(on) Rise Time t 22 r V = 10 V, V = 80 V, GS DD I = 17 A, R = 6.1 D G TurnOff Delay Time t 24 d(off) Fall Time t 20 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.85 1.2 V SD J V = 0 V, I = 17 A GS S T = 125C 0.7 J Reverse Recovery Time t 56 ns rr Charge Time t 41 a V = 0 V, dI /dt = 100 A/ s, GS S I = 17 A S Discharge Time t 15 b Reverse Recovery Charge Q 135 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.