NTE2394 MOSFET NChannel Enhancement Mode, High Speed Switch TO3P Type Package Description: The NTE2394 is an NChannel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D High Voltage: 450V for OffLine SMPS High Current: 12A for up to 350W SMPS Ultra Fast Switching for Operation at less than 100kHz G Industrial Applications: Switching Mode Power Supplies S Motor Controls Absolute Maximum Ratings: DrainSource Voltage (V = 0, Note 1), V ......................................... 500V GS DS DrainGate Voltage (R = 20k Note 1), V ...................................... 500V GS DGR GateSource Voltage, V ......................................................... 20V GS Pulsed Drain Current (Note 2), I ................................................... 56A DM Clamped Drain Inductive Current (L = 100 H), I ..................................... 56A DLM Continuous Drain Current, I D T = +25 C .................................................................. 14A C T = +100 C ................................................................ 8.8A C Total Dissipation (T = +25 C), P ................................................. 180W C tot Derate Above 25 C ...................................................... 1.44W/ C Maximum Operating Junction Temperature, T ...................................... +150 C J Storage Temperature Range, T .......................................... 55 to +150 C stg Note 1. T = +25 to +125 C J Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature. Rev. 1013Thermal Data: Maximum Thermal Resistance, Junction toCase, R ........................... 0.69 C/W thJC Typical Thermal Resistance, Case toSink, R .................................. 0.1 C/W thCS Maximum Thermal Resistance, Junction toAmbient, R ......................... 30 C/W thJA Maximum Lead Temperature (During Soldering), T ................................. +300 C L Electrical Characteristics: (T = +25 C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics DrainSource Breakdown Voltage V I = 250 A, V = 0 500 V (BR)DSS D GS ZeroGate Voltage Drain Current I V = 0, V = Max Rating 250 A DSS GS DS V = 0, V = 400V, 1000 A GS DS T = +125 C C GateBody Leakage Current I V = 0, V = 20V 500 nA GSS DS GS ON Characteristics (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2 4 V GS(th) DS GS D OnState Drain Current I V > I x R , 14 A D(on) DS D(on) DS(on) max V = 10V GS Static Drain Source On Resistance R V = 10V, I = 7.9A 0.4 DS(on) GS D Dynamic Characteristics Forward Transconductance g V > I x R , 9.3 mho fs DS D(on) DS(on) max I = 7.9A, Note 4 D Input Capacitance C V = 25V, V = 0, 3000 pf iss DS GS f = 1MHz Output Capacitance C 600 pf oss Reverse Transfer Capacitance C 200 pf rss Switching Characteristics TurnOn Time t V = 210V, I = 7.0A, 35 ns d(on) DD D R = 4.7 I Rise Time t 50 ns r TurnOff Delay Time t 150 ns d(off) Fall Time t 70 ns f Total Gate Charge Q V = 10V, I = 13A, 120 nC g GS D V = 400V DS Source Drain Diode Characteristics SourceDrain Current I 14 A SD SourceDrain Current (Pulsed) I Note 3 56 A SDM Forward ON Voltage V I = 14A, V = 0 1.4 V SD SD GS Reverse Recovery Time t 1300 ns I = 14A, di/dt = 100A/ s, rr DS T = +150 C J Reverse Recovered Charge Q 7.4 C rr Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulsed: Pulse Duration = 300 s, Duty Cycle 1.5%