NTGS3130NT1G ON Semiconductor

NTGS3130N, NVGS3130N MOSFET Single, N-Channel, TSOP-6 20 V, 5.6 A, 24 m Features Leading Edge Trench Technology for Low On Resistance NTGS3130N, NVGS3130N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 9.8 mV/C (BR)DSS J Temperature Coefficient V = 0 V V = 16 V, GS DS Zero Gate Voltage Drain Current I 1.0 A DSS T = 25C J GatetoSource Leakage Current I V = 0, V = 8 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V I = 250 A 0.4 0.6 1.4 V GS(TH) GS DS, D Negative Temperature Coefficient V /T 3.4 mV/C GS(TH) J V = 4.5 V, I = 5.6 A 19 24 GS D DraintoSource OnResistance R m DS(on) V = 2.5 V, I = 4.9 A 25 32 GS D Forward Transconductance g V = 10 V, I = 5.6 A 8.2 S FS DS D CHARGES, CAPACITANCE, & GATE RESISTANCE Input Capacitance C 935 ISS V = 0 V, GS Output Capacitance C f = 1 MHz, 169 OSS V = 16 V DS Reverse Transfer Capacitance C 104 RSS pF Input Capacitance C 965 ISS V = 0 V, GS Output Capacitance C f = 1 MHz, 198 OSS V = 10 V DS Reverse Transfer Capacitance C 110 RSS Total Gate Charge Q 13.2 20.3 G(TOT) V = 4.5 V Threshold Gate Charge Q GS 0.60 G(TH) V = 16 V DS GatetoSource Charge Q 1.5 I = 5.6 A GS D GatetoDrain Charge Q 4.2 GD nC Total Gate Charge Q 11.8 18.0 G(TOT) V = 4.5 V Threshold Gate Charge Q 0.6 GS G(TH) V = 5.0 V DS GatetoSource Charge Q 1.4 GS I = 6.2 A D GatetoDrain Charge Q 2.7 GD SWITCHING CHARACTERISTICS, V = 4.5 V (Note 4) GS TurnOn Delay Time t 6.3 12.6 d(ON) V = 4.5 V, GS Rise Time t 7.3 13.5 r V = 16 V, DD ns I = 1 A, TurnOff Delay Time t D 21.7 35.1 d(OFF) R = 3 G Fall Time t 9.7 17.6 f DRAINSOURCE DIODE CHARACTERISTICS V = 0 V, GS Forward Diode Voltage V T = 25C 0.7 1.2 V SD J I = 1.0 A S Reverse Recovery Time t 20.4 RR V = 0 Vdc, Charge Time t GS 8.1 a ns dI /dt = 100 A/ s, SD Discharge Time t 11.6 I = 1.0 A b S Reverse Recovery Charge Q 8.8 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature.