NTF5P03T3 ON Semiconductor

NTF5P03, NVF5P03 Power MOSFET -5.2 A, -30 V PChannel SOT223 NTF5P03, NVF5P03 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Negative sign for PChannel devices omitted for clarity Rating Symbol Max Unit DraintoSource Voltage V 30 V DSS DraintoGate Voltage (R = 1.0 M ) V 30 V GS DGR GatetoSource Voltage Continuous V 20 V GS 1 sq in Thermal Resistance Junction to Ambient R 40 C/W THJA FR4 or G10 PCB Total Power Dissipation T = 25C P 3.13 Watts A D Linear Derating Factor 25 mW/C Drain Current Continuous T = 25C I 5.2 A A D 10 seconds Continuous T = 70C I 4.1 A A D Pulsed Drain Current (Note 1) I 26 A DM Minimum Thermal Resistance Junction to Ambient R 80 C/W THJA FR4 or G10 PCB P 1.56 Watts Total Power Dissipation T = 25C D A 12.5 mW/C Linear Derating Factor I 3.7 A D Drain Current Continuous T = 25C A 10 seconds I 2.9 A D Continuous T = 70C A I 19 A DM Pulsed Drain Current (Note 1) Operating and Storage Temperature Range T , T 55 to 150 C J stg Single Pulse Drain toSource Avalanche Energy Starting T = 25C E mJ J AS 250 (V = 30 Vdc, V = 10 Vdc, Peak I = 12 Apk, L = 3.5 mH, R = 25 ) DD GS L G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Repetitive rating pulse width limited by maximum junction temperature.