Product Information

NTHD3102CT1G

NTHD3102CT1G electronic component of ON Semiconductor

Datasheet
MOSFET 20V 5.5A/-4.2A Complementary
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2257 ea
Line Total: USD 677.1

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

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NTHD3102CT1G
ON Semiconductor

3000 : USD 0.4934

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NTHD3102CT1G
ON Semiconductor

1 : USD 0.9987
10 : USD 0.9447
25 : USD 0.8573
100 : USD 0.7663
250 : USD 0.7492
500 : USD 0.7342
1000 : USD 0.7342
3000 : USD 0.7342

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Ships to you between Thu. 09 May to Wed. 15 May

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NTHD3102CT1G
ON Semiconductor

3000 : USD 0.2257
6000 : USD 0.2257
9000 : USD 0.2257
12000 : USD 0.2257
15000 : USD 0.2257

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NTHD3102CT1G
ON Semiconductor

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NTHD3102CT1G
ON Semiconductor

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30 : USD 0.5284
100 : USD 0.4505
500 : USD 0.4358
1000 : USD 0.4285

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NTHD3102CT1G
ON Semiconductor

1 : USD 2.457
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100 : USD 0.6923
500 : USD 0.5724
1000 : USD 0.4515
3000 : USD 0.4234

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NTHD3102CT1G
ON Semiconductor

1 : USD 1.4397
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22 : USD 0.7355
59 : USD 0.6948

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Ships to you between Thu. 09 May to Wed. 15 May

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NTHD3102CT1G
ON Semiconductor

16 : USD 0.9472
25 : USD 0.8603
100 : USD 0.7699
250 : USD 0.7546

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NTHD3102CT1G
ON Semiconductor

16 : USD 0.5328

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

D6 M NTHD3102C MOSFET Power, Complementary, ChipFET 20 V, +5.5 A /-4.2 A Features NTHD3102C MAXIMUM RATINGS (continued) (T = 25C unless otherwise noted) J Parameter Symbol Value Unit NChannel Steady T = 25C I 3.0 A A D Continuous Drain Current (Note 3) State T = 85C 2.2 A PChannel Steady I A T = 25C 2.3 A D Continuous Drain Current (Note 3) State T = 85C 1.7 A Power Dissipation (Note 3) T = 25C P 0.6 W A D Pulsed Drain Current NCh tp = 10 s I 16 A DM PCh 12.6 Operating Junction and Storage Temperature T , T 55 to 150 C J STG Source Current (Body Diode) I 1.7 A S Lead Temperature for Soldering Purposes (1/8 from case for 10 seconds) T 260 C L THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 2) R 110 C/W JA JunctiontoAmbient t 5 s (Note 2) 60 JunctiontoAmbient Steady State (Note 3) 195 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol N/P Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V N I = 250 A 20 V (BR)DSS D (Note 4) V = 0 V GS P I = 250 A 20 D DraintoSource Breakdown Voltage V /T N 20.2 mV/C (BR)DSS J Temperature Coefficient P 16.2 Zero Gate Voltage Drain Current I N V = 0 V, V = 16 V 1.0 A DSS GS DS T = 25 C J P V = 0 V, V = 16 V 1.0 GS DS N V = 0 V, V = 16 V 5.0 GS DS T = 85 C J P V = 0 V, V = 16 V 5.0 GS DS GatetoSource Leakage Current I N V = 0 V, V = 8.0 V 100 nA GSS DS GS P V = 0 V, V = 8.0 V 100 DS GS Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 3. Surfacemounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq). 4. Switching characteristics are independent of operating junction temperatures.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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