Product Information

NTJD4152PT1G

NTJD4152PT1G electronic component of ON Semiconductor

Datasheet
MOSFET 20V 0.88mA P-Channel ESD Protection

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2111 ea
Line Total: USD 1.06

4796 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
865 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NTJD4152PT1G
ON Semiconductor

1 : USD 0.2388
10 : USD 0.2363
25 : USD 0.1518
100 : USD 0.1489
250 : USD 0.1489
500 : USD 0.1489

107670 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

NTJD4152PT1G
ON Semiconductor

3000 : USD 0.1353
9000 : USD 0.1353

69840 - WHS 3


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

NTJD4152PT1G
ON Semiconductor

3000 : USD 0.146

4796 - WHS 4


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

NTJD4152PT1G
ON Semiconductor

5 : USD 0.2111
50 : USD 0.1722
150 : USD 0.1557
500 : USD 0.1349
3000 : USD 0.1257
6000 : USD 0.1201

8730 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

NTJD4152PT1G
ON Semiconductor

3000 : USD 0.1303

865 - WHS 6


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 53
Multiples : 1

Stock Image

NTJD4152PT1G
ON Semiconductor

53 : USD 0.1518
100 : USD 0.1489

107670 - WHS 7


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

Stock Image

NTJD4152PT1G
ON Semiconductor

3000 : USD 0.1539

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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The NTJD4152PT1G is a type of Semiconductor device manufactured by ON Semiconductor. It is a P-Channel Enhancement Mode MOSFET designed to provide ESD protection for low voltage applications. It has a drain-source voltage rating of 20V and a continuous drain current rating of 0.88mA. This type of MOSFET is a versatile device used to control the flow of current within the circuit and can be used for DC-DC converters, load switch and other power management systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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