NTJD4152PT1G ON Semiconductor

NTJD4152PT1G electronic component of ON Semiconductor
NTJD4152PT1G ON Semiconductor
NTJD4152PT1G MOSFETs
NTJD4152PT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTJD4152PT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTJD4152PT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTJD4152PT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 20V 0.88mA P-Channel ESD Protection
Datasheet: NTJD4152PT1G Datasheet (PDF)
Price (USD)
5: USD 0.1872 ea
Line Total: USD 0.94 
Availability : 945
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
5$ 0.1872
50$ 0.1498
150$ 0.1314
500$ 0.0791
3000$ 0.0626
6000$ 0.0588

Availability 945
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.1872
50$ 0.1498
150$ 0.1314
500$ 0.0791
3000$ 0.0626
6000$ 0.0588


Availability 2420
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1849
Multiples : 1
QtyUnit Price
1849$ 0.1407


Availability 11640
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0816
6000$ 0.0809
9000$ 0.0789
15000$ 0.0761
21000$ 0.0753
30000$ 0.0748


Availability 5820
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 6000
Multiples : 3000
QtyUnit Price
6000$ 0.0813
6000$ 0.0789

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
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We are delighted to provide the NTJD4152PT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTJD4152PT1G and other electronic components in the MOSFETs category and beyond.

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The NTJD4152PT1G is a type of Semiconductor device manufactured by ON Semiconductor. It is a P-Channel Enhancement Mode MOSFET designed to provide ESD protection for low voltage applications. It has a drain-source voltage rating of 20V and a continuous drain current rating of 0.88mA. This type of MOSFET is a versatile device used to control the flow of current within the circuit and can be used for DC-DC converters, load switch and other power management systems.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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