C5 M NTHD4502N MOSFET Power, Dual, N-Channel, ChipFET 30 V, 3.9 A Features NTHD4502N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 4) R 110 C/W JA JunctiontoAmbient t 5 s (Note 4) R 60 JA JunctiontoAmbient Steady State (Note 5) R 195 JA JunctiontoFoot Steady State (Note 5) R 40 JF 4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). 5. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.214 in sq). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 30 36 V V = 0 V, I = 250 A (BR)DSS GS D Zero Gate Voltage Drain Current I V = 0 V, V = 24 V 1.0 A DSS GS DS V = 0 V, V = 24 V, T = 125C 10 GS DS J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.0 1.65 3.0 V GS(TH) GS DS D DraintoSource OnResistance R V = 10 V, I = 2.9 A 78 85 m DS(on) GS D V = 4.5 V, I = 2.2 A 105 140 GS D Forward Transconductance g V = 15 V, I = 2.9 A 3.8 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 140 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 53 OSS V = 15 V DS Reverse Transfer Capacitance C 16 RSS Input Capacitance C 135 250 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 42 75 OSS V = 24 V DS Reverse Transfer Capacitance C 13 25 RSS Total Gate Charge Q 3.6 7.0 nC G(TOT) Threshold Gate Charge Q 0.3 G(TH) V = 10 V, V = 15 V, GS DS I = 2.9 A D GatetoSource Charge Q 0.6 GS GatetoDrain Charge Q 0.7 GD Total Gate Charge Q 1.9 nC G(TOT) Threshold Gate Charge Q 0.3 G(TH) V = 4.5 V, V = 24 V, GS DS I = 2.9 A D GatetoSource Charge Q 0.6 GS GatetoDrain Charge Q 0.9 GD 6. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.