X-On Electronics has gained recognition as a prominent supplier of NTLJD3119CTBG mosfet across the USA, India, Europe, Australia, and various other global locations. NTLJD3119CTBG mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTLJD3119CTBG

NTLJD3119CTBG electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.NTLJD3119CTBG
Manufacturer: ON Semiconductor
Category:MOSFET
Description: ON Semiconductor MOSFET COMP 2X2 20V 3.8A 100mOhm
Datasheet: NTLJD3119CTBG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5902 ea
Line Total: USD 0.59

Availability - 5540
Ships to you between
Thu. 06 Jun to Tue. 11 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5540 - WHS 1


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 0.5902
10 : USD 0.4694
30 : USD 0.4191
100 : USD 0.3546
500 : USD 0.3264
1000 : USD 0.3082

94241 - WHS 2


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7866
10 : USD 0.636
100 : USD 0.4899
500 : USD 0.422
1000 : USD 0.368
3000 : USD 0.3255
6000 : USD 0.3255
9000 : USD 0.3151
24000 : USD 0.3117

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We proudly offer the NTLJD3119CTBG MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the NTLJD3119CTBG MOSFET.

NTLJD3119C MOSFET Power, Complementary, WDFN 2X2 mm 20 V/-20 V, 4.6 A/-4.1 A www.onsemi.com Features Complementary NChannel and PChannel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermal V R MAX I MAX (BR)DSS DS(on) D Conduction 65 m 4.5 V 3.8 A NChannel Footprint Same as SC88 Package 2.0 A 85 m 2.5 V 20 V Leading Edge Trench Technology for Low On Resistance 120 m 1.8 V 1.7 A 1.8 V Gate Threshold Voltage 100 m 4.5 V 4.1 A Low Profile (< 0.8 mm) for Easy Fit in Thin Environments PChannel 2.0 A 135 m 2.5 V 20 V This is a PbFree Device 200 m 1.8 V 1.6 A Applications Synchronous DCDC Conversion Circuits Load/Power Management of Portable Devices like PDAs, Cellular MARKING D2 D1 DIAGRAM Phones and Hard Drives Color Display and Camera Flash Regulators 1 WDFN6 JM M CASE 506AN MAXIMUM RATINGS (T = 25C unless otherwise noted) J Pin 1 Parameter Symbol Value Unit JM = Specific Device Code DraintoSource Voltage NCh V 20 V DSS M = Date Code PCh 20 = PbFree Package GatetoSource Voltage NCh V 8.0 V GS (Note: Microdot may be in either location) PCh NChannel T = 25C I 3.8 A Steady A D PIN CONNECTIONS Continuous Drain State T = 85C 2.8 A Current (Note 1) t 5 s T = 25C 4.6 A D1 T = 25C 3.3 PChannel I A S1 D1 Steady A D 1 6 Continuous Drain State T = 85C 2.4 A Current (Note 1) t 5 s T = 25C 4.1 A G1 G2 2 5 Power Dissipation Steady P 1.5 W D D2 (Note 1) State T = 25C A D2 3 4 t 5 s 2.3 S2 NChannel T = 25C I 2.6 A A D Steady Continuous Drain State T = 85C 1.9 (Top View) A Current (Note 2) T = 25C 2.3 PChannel I A A D Steady Continuous Drain ORDERING INFORMATION State T = 85C 1.6 A Current (Note 2) Device Package Shipping Power Dissipation Steady P 0.71 W D T = 25C A (Note 2) State NTLJD3119CTAG WDFN6 3000/Tape & Reel Pulsed Drain Current NCh I 18 A t = 10 s (PbFree) p DM PCh 20 NTLJD3119CTBG WDFN6 3000/Tape & Reel Operating Junction and Storage Temperature T , T 55 to C J STG (PbFree) 150 For information on tape and reel specifications, Lead Temperature for Soldering Purposes T 260 C L including part orientation and tape sizes, please (1/8 from case for 10 s) refer to our Tape and Reel Packaging Specification Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 5 NTLJD3119C/DNTLJD3119C 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size 2 of 30 mm , 2 oz Cu. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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