NTLJD3119CTBG ON Semiconductor

Hot NTLJD3119CTBG electronic component of ON Semiconductor
NTLJD3119CTBG ON Semiconductor
NTLJD3119CTBG MOSFETs
NTLJD3119CTBG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NTLJD3119CTBG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTLJD3119CTBG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NTLJD3119CTBG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET COMP 2X2 20V 3.8A 100mOhm
Datasheet: NTLJD3119CTBG Datasheet (PDF)
Price (USD)
1: USD 0.614 ea
Line Total: USD 0.61 
Availability : 1075
  
Ship by Wed. 20 Aug to Mon. 25 Aug
QtyUnit Price
1$ 0.614
10$ 0.5394
30$ 0.5062
100$ 0.3156
500$ 0.2634
1000$ 0.2558

Availability 223
Ship by Mon. 11 Aug to Wed. 13 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3125
10$ 0.7908
100$ 0.4895
500$ 0.3916
1000$ 0.3619
3000$ 0.3234
6000$ 0.3113
9000$ 0.3102


Availability 1075
Ship by Wed. 20 Aug to Mon. 25 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.614
10$ 0.5394
30$ 0.5062
100$ 0.3156
500$ 0.2634
1000$ 0.2558

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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Forward Transconductance - Min
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTLJD3119CTBG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTLJD3119CTBG and other electronic components in the MOSFETs category and beyond.

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NTLJD3119C MOSFET Power, Complementary, WDFN 2X2 mm 20 V/-20 V, 4.6 A/-4.1 A www.onsemi.com Features Complementary NChannel and PChannel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermal V R MAX I MAX (BR)DSS DS(on) D Conduction 65 m 4.5 V 3.8 A NChannel Footprint Same as SC88 Package 2.0 A 85 m 2.5 V 20 V Leading Edge Trench Technology for Low On Resistance 120 m 1.8 V 1.7 A 1.8 V Gate Threshold Voltage 100 m 4.5 V 4.1 A Low Profile (< 0.8 mm) for Easy Fit in Thin Environments PChannel 2.0 A 135 m 2.5 V 20 V This is a PbFree Device 200 m 1.8 V 1.6 A Applications Synchronous DCDC Conversion Circuits Load/Power Management of Portable Devices like PDAs, Cellular MARKING D2 D1 DIAGRAM Phones and Hard Drives Color Display and Camera Flash Regulators 1 WDFN6 JM M CASE 506AN MAXIMUM RATINGS (T = 25C unless otherwise noted) J Pin 1 Parameter Symbol Value Unit JM = Specific Device Code DraintoSource Voltage NCh V 20 V DSS M = Date Code PCh 20 = PbFree Package GatetoSource Voltage NCh V 8.0 V GS (Note: Microdot may be in either location) PCh NChannel T = 25C I 3.8 A Steady A D PIN CONNECTIONS Continuous Drain State T = 85C 2.8 A Current (Note 1) t 5 s T = 25C 4.6 A D1 T = 25C 3.3 PChannel I A S1 D1 Steady A D 1 6 Continuous Drain State T = 85C 2.4 A Current (Note 1) t 5 s T = 25C 4.1 A G1 G2 2 5 Power Dissipation Steady P 1.5 W D D2 (Note 1) State T = 25C A D2 3 4 t 5 s 2.3 S2 NChannel T = 25C I 2.6 A A D Steady Continuous Drain State T = 85C 1.9 (Top View) A Current (Note 2) T = 25C 2.3 PChannel I A A D Steady Continuous Drain ORDERING INFORMATION State T = 85C 1.6 A Current (Note 2) Device Package Shipping Power Dissipation Steady P 0.71 W D T = 25C A (Note 2) State NTLJD3119CTAG WDFN6 3000/Tape & Reel Pulsed Drain Current NCh I 18 A t = 10 s (PbFree) p DM PCh 20 NTLJD3119CTBG WDFN6 3000/Tape & Reel Operating Junction and Storage Temperature T , T 55 to C J STG (PbFree) 150 For information on tape and reel specifications, Lead Temperature for Soldering Purposes T 260 C L including part orientation and tape sizes, please (1/8 from case for 10 s) refer to our Tape and Reel Packaging Specification Stresses exceeding those listed in the Maximum Ratings table may damage the Brochure, BRD8011/D. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 5 NTLJD3119C/DNTLJD3119C 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size 2 of 30 mm , 2 oz Cu. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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