NTLUS4C16N MOSFET Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 11.7 A www.onsemi.com Features MOSFET UDFN Package with Exposed Drain Pads for Excellent Thermal V R MAX I MAX (BR)DSS DS(on) D Conduction 11.4 m 10 V Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Ultra Low R 13.3 m 4.5 V DS(on) These Devices are PbFree, Halogen Free/BFR Free and are RoHS 14.2 m 3.7 V 30 V 11.7 A Compliant 15.2 m 3.3 V 20 m 2.5 V Applications 40 m 1.8 V Power Load Switch Wireless Charging D DCDC Converters MAXIMUM RATINGS (T = 25C unless otherwise stated) J G Parameter Symbol Value Unit Drain-to-Source Voltage V 30 V DSS Gate-to-Source Voltage V 12 V GS S Continuous Drain Steady I A T = 25C 9.4 A D NCHANNEL MOSFET Current (Note 1) State T = 85C 6.8 A MARKING DIAGRAM S t 5 s T = 25C 11.7 A D 1 UDFN6 Power Dissipa- P W Steady T = 25C 1.53 A D AHM tion (Note 1) State ( COOL ) CASE 517AU Pin 1 t 5 s T = 25C 2.37 A AH = Specific Device Code Continuous Drain Steady T = 25C I 6.1 A A D M = Date Code Current (Note 2) State T = 85C 4.4 A = PbFree Package (Note: Microdot may be in either location) Power Dissipation (Note 2) T = 25C P 0.65 W A D Pulsed Drain Current t = 10 s I 28 A p DM PIN CONNECTIONS MOSFET Operating Junction and Storage T , -55 to C J Temperature T 150 STG Source Current (Body Diode) (Note 1) I 2.0 A S D 1 6 D Lead Temperature for Soldering Purposes T 260 C L D (1/8 from case for 10 s) D 2 5 D Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. G 3 4 S 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq S 2 oz including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size, (Top View) 2 oz. Cu. ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 0 NTLUS4C16N/DNTLUS4C16N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 81.7 JA Junction-to-Ambient t 5 s (Note 3) R 52.8 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 193.6 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 11 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1 A DSS GS J V = 24 V DS T = 125C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 0.6 1.1 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 10 V, I = 8.0 A 9.3 11.4 DS(on) GS D V = 4.5 V, I = 5.0 A 10.7 13.3 GS D V = 3.7 V, I = 3.0 A 11.4 14.2 GS D V = 3.3 V, I = 3.0 A 12.0 15.2 GS D V = 2.5 V, I = 2.5 A 14.3 20 GS D V = 1.8 V, I = 2.5 A 26 40 GS D Forward Transconductance g V = 1.5 V, I = 5.0 A 31 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 690 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 305 OSS V = 15 V DS Reverse Transfer Capacitance C 26 RSS nC Total Gate Charge Q 7.5 G(TOT) Threshold Gate Charge Q 0.6 G(TH) V = 4.5 V, V = 15 V GS DS I = 5.0 A D Gate-to-Source Charge Q 1.3 GS Gate-to-Drain Charge Q 1.4 GD SWITCHING CHARACTERISTICS, V = 4.5 V (Note 6) GS ns Turn-On Delay Time t 6.0 d(ON) Rise Time t 14.5 r V = 4.5 V, V = 15 V, GS DD I = 5.0 A, R = 1 D G Turn-Off Delay Time t 17.5 d(OFF) Fall Time t 2.5 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.7 1.0 SD J V = 0 V, GS I = 2.0 A S T = 125C 0.5 J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2