NTMD6N02R2G ON Semiconductor

E6N02 ALYW NTMD6N02R2 MOSFET Power, Dual, N-Channel Enhancement Mode, SO-8 6.0 A, 20 V NTMD6N02R2 MAXIMUM RATINGS (T = 25C unless otherwise noted) (continued) J Rating Symbol Value Unit Operating and Storage Temperature Range T , T 55 to +150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 360 mJ J AS (V = 20 Vdc, V = 5.0 Vdc, Peak I = 6.0 Apk, L = 20 mH, R = 25 ) DD GS L G Maximum Lead Temperature for Soldering Purposes for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Note 5) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 20 GS D Temperature Coefficient (Positive) 19.2 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 20 Vdc, V = 0 Vdc, T = 25C) 1.0 DS GS J (V = 20 Vdc, V = 0 Vdc, T = 125C) 10 DS GS J GateBody Leakage Current (V = +12 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS GateBody Leakage Current (V = 12 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) 0.6 0.9 1.2 (V = V , I = 250 Adc) DS GS D 3.0 mV/C Temperature Coefficient (Negative) Static DraintoSource OnState Resistance R DS(on) (V = 4.5 Vdc, I = 6.0 Adc) 0.028 0.035 GS D (V = 4.5 Vdc, I = 4.0 Adc) 0.028 0.043 GS D (V = 2.7 Vdc, I = 2.0 Adc) 0.033 0.048 GS D (V = 2.5 Vdc, I = 3.0 Adc) 0.035 0.049 GS D Forward Transconductance (V = 12 Vdc, I = 3.0 Adc) g 10 Mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 785 1100 pF iss (V = 16 Vdc, V = 0 Vdc, DS GS Output Capacitance C 260 450 oss f = 1.0 MHz) Reverse Transfer Capacitance C 75 180 rss SWITCHING CHARACTERISTICS (Notes 6 and 7) TurnOn Delay Time t 12 20 ns d(on) (V = 16 Vdc, I = 6.0 Adc, DD D Rise Time t 50 90 r V = 4.5 Vdc, GS TurnOff Delay Time t 45 75 d(off) R = 6.0 ) G Fall Time t 80 130 f TurnOn Delay Time t 11 18 ns d(on) (V = 16 Vdc, I = 4.0 Adc, Rise Time DD D t 35 65 r V = 4.5 Vdc, GS TurnOff Delay Time t 45 75 d(off) R = 6.0 ) G Fall Time t 60 110 f Total Gate Charge Q 12 20 nC tot (V = 16 Vdc, DS GateSource Charge V = 4.5 Vdc, Q 1.5 gs GS I = 6.0 Adc) D GateDrain Charge Q 4.0 gd 5. Handling precautions to protect against electrostatic discharge is mandatory 6. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. 7. Switching characteristics are independent of operating junction temperature.