NTMD6P02, NVMD6P02 MOSFET Power, Dual, P-Channel, SOIC-8 6 A, 20 V Features Ultra Low R DS(on) www.onsemi.com Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Dual SOIC8 Surface Mount Package 6 AMPERES, 20 VOLTS Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified PChannel These Devices are PbFree and are RoHS Compliant D NVMD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable G Applications Power Management in Portable and BatteryPowered Products, S i.e.: Cellular and Cordless Telephones, and PCMCIA Cards MAXIMUM RATINGS MARKING DIAGRAM & PIN ASSIGNMENT Rating Symbol Value Unit DraintoSource Voltage V 20 V D1 D1 D2 D2 DSS 8 8 GatetoSource Voltage Continuous V 12 V GS 1 Thermal Resistance E6P02 SOIC8 JunctiontoAmbient (Note 1) R 62.5 C/W JA AYWW CASE 751 Total Power Dissipation T = 25C P 2.0 W A D Continuous Drain Current T = 25C 7.8 A STYLE 11 I A D Continuous Drain Current T = 70C I 5.7 A 1 A D Maximum Operating Power Dissipation P 0.5 W D S1 G1 S2 G2 Maximum Operating Drain Current I 3.89 A D Pulsed Drain Current (Note 4) I 40 A E6P02 = Specific Device Code DM A = Assembly Location Thermal Resistance JunctiontoAmbient (Note 2) 98 C/W Y = Year R JA Total Power Dissipation T = 25C P 1.28 W WW = Work Week A D Continuous Drain Current T = 25C I 6.2 A A D = PbFree Package Continuous Drain Current T = 70C I 4.6 A A D (Note: Microdot may be in either location) Maximum Operating Power Dissipation P 0.3 W D Maximum Operating Drain Current I 3.01 A D Pulsed Drain Current (Note 4) I 35 A DM ORDERING INFORMATION Thermal Resistance JunctiontoAmbient (Note 3) R 166 C/W JA Device Package Shipping Total Power Dissipation T = 25C P 0.75 W A D Continuous Drain Current T = 25C I 4.8 A A D NTMD6P02R2G SOIC8 2500 / Tape & Reel Continuous Drain Current T = 70C I 3.5 A A D (PbFree) Maximum Operating Power Dissipation P 0.2 W D Maximum Operating Drain Current I 2.48 A D NVMD6P02R2G SOIC8 2500 / Tape & Reel Pulsed Drain Current (Note 4) 30 A I DM (PbFree) Operating and Storage Temperature Range T , T 55 to C J stg For information on tape and reel specifications, +150 including part orientation and tape sizes, please Single Pulse DraintoSource Avalanche E 500 mJ AS refer to our Tape and Reel Packaging Specifications Energy Starting T = 25C (V = 20 Vdc, J DD Brochure, BRD8011/D V = 5.0 Vdc, Peak I = 5.0 Apk, GS L L = 40 mH, R = 25 ) G Maximum Lead Temperature for Soldering T 260 C L Purposes for 10 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted onto a 2 square FR4 Board (1 in sq, 2 oz. Cu 0.06 thick single sided), t = 10 seconds. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 5 NTMD6P02R2/DNTMD6P02, NVMD6P02 2. Mounted onto a 2 square FR4 Board (1 in sq, 2 oz. Cu 0.06 thick single sided), t = steady state. 3. Minimum FR4 or G10 PCB, t = steady state. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. www.onsemi.com 2