X-On Electronics has gained recognition as a prominent supplier of NTMFS4898NFT3G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMFS4898NFT3G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMFS4898NFT3G ON Semiconductor

NTMFS4898NFT3G electronic component of ON Semiconductor
NTMFS4898NFT3G ON Semiconductor
NTMFS4898NFT3G MOSFETs
NTMFS4898NFT3G  Semiconductors

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See Product Specifications
Part No. NTMFS4898NFT3G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 30V 36.7A 8-Pin SO-FL T/R
Datasheet: NTMFS4898NFT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
392: USD 1.197 ea
Line Total: USD 469.22 
Availability - 5500
Ship by Fri. 16 May to Thu. 22 May
MOQ: 392  Multiples: 1
Pack Size: 1
Availability Price Quantity
5500
Ship by Fri. 16 May to Thu. 22 May
MOQ : 392
Multiples : 1
392 : USD 1.197
500 : USD 1.0774
1000 : USD 0.9936
10000 : USD 0.8858
100000 : USD 0.7423

   
Manufacturer
Product Category
Packaging
Channel Mode
Pin Count
Mounting
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Polarity
Type
Drain-Source On-Volt
Gate-Source Voltage Max
Drain-Source On-Res
Rad Hardened
Package Type
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTMFS4898NFT3G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMFS4898NFT3G and other electronic components in the MOSFETs category and beyond.

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NTMFS4898NF Power MOSFET 30 V, 117 A, Single NChannel, SO8FL Features Integrated Schottky Diode Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses NTMFS4898NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction toCase (Drain) R 1.7 JC JunctiontoAmbient Steady State (Note 1) R 46 JA C/W JunctiontoAmbient Steady State (Note 2) R 134.2 JA JunctiontoAmbient t  10 sec R 17.3 JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surface mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 1.0 mA 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 26 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 40 500 DSS GS J A V = 24 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 1.0 mA 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 2.2 3.0 DS(on) GS D I = 15 A 2.2 D m V = 4.5 V I = 30 A 3.4 4.8 GS D I = 15 A 3.4 D Forward Transconductance g V = 1.5 V, I = 15 A 77 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 3233 ISS Output Capacitance C 700 V = 0 V, f = 1 MHz, V = 12 V pF OSS GS DS Reverse Transfer Capacitance C 310 RSS Total Gate Charge Q 24.5 G(TOT) Threshold Gate Charge Q 3.2 G(TH) V = 4.5 V, V = 15 V; I = 30 A nC GS DS D GatetoSource Charge Q 10 GS GatetoDrain Charge Q 9 GD Total Gate Charge Q V = 10 V, V = 15 V, 49.5 G(TOT) GS DS nC I = 30 A D SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 17.6 d(ON) Rise Time t 23 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0  D G Turn Off Delay Time t 28 d(OFF) Fall Time t 8.3 f 3. Pulse Test: pulse width  300 s, duty cycle  2%. 4. Switching characteristics are independent of operating junction temperatures.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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