NTMFS4943N
Power MOSFET
30 V, 41 A, Single NChannel, SO8 FL
Features
Low R to Minimize Conduction Losses
DS(on)
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses NTMFS4943N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction toCase (Drain) R 5.6
JC
JunctiontoAmbient Steady State (Note 3) R 49.1
JA
C/W
JunctiontoAmbient Steady State (Note 4) R 137.2
JA
JunctiontoAmbient (t 10 s) (Note 3) R 18.3
JA
3. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
4. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified)
J
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V
(BR)DSS GS D
DraintoSource Breakdown Voltage V V = 0 V, I = 10.5 A, 34 V
(BR)DSSt GS D(aval)
(transient) T = 25C, t = 100 ns
case transient
DraintoSource Breakdown Voltage V / 15
(BR)DSS
mV/C
Temperature Coefficient T
J
Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0
DSS GS J
V = 24 V A
DS
T = 125C 10
J
GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA
GSS DS GS
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage V V = V , I = 250 A 1.2 1.66 2.2 V
GS(TH) GS DS D
Negative Threshold Temperature Coefficient V /T 4.0 mV/C
GS(TH) J
DraintoSource On Resistance R V = 10 V I = 30 A 5.8 7.2
DS(on) GS D
I = 15 A 5.8
D
m
V = 4.5 V I = 30 A 8.2 11
GS D
I = 15 A 8.2
D
Forward Transconductance g V = 1.5 V, I = 15 A 32 S
FS DS D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C 1401
ISS
Output Capacitance C 446
OSS V = 0 V, f = 1 MHz, V = 15 V pF
GS DS
Reverse Transfer Capacitance C 16
RSS
Capacitance Ratio C / V = 0 V, V = 15 V, f = 1 MHz 0.011 0.023
RSS GS DS
C
ISS
Total Gate Charge Q 9.2
G(TOT)
Threshold Gate Charge Q 2.7
G(TH)
V = 4.5 V, V = 15 V; I = 30 A nC
GS DS D
GatetoSource Charge Q 4.4
GS
GatetoDrain Charge Q 1.9
GD
Total Gate Charge Q V = 10 V, V = 15 V; I = 30 A 20.9 nC
G(TOT) GS DS D
SWITCHING CHARACTERISTICS (Note 6)
TurnOn Delay Time t 11
d(ON)
Rise Time t 31
r
V = 4.5 V, V = 15 V,
GS DS
ns
I = 15 A, R = 3.0
D G
Turn Off Delay Time t 18
d(OFF)
Fall Time t 3.0
f
5. Pulse Test: pulse width 300 s, duty cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.