NTP5864N MOSFET Power 60 V, 63 A, 12.4 m Features Low R DS(on) High Current Capability www.onsemi.com Avalanche Energy Specified I MAX These Devices are PbFree, Halogen Free/BFR Free and are RoHS D V R MAX (Note 1) (BR)DSS DS(ON) Compliant 60 V 12.4 m 10 V 63 A MAXIMUM RATINGS (T = 25C unless otherwise stated) J NChannel Parameter Symbol Value Units D DraintoSource Voltage V 60 V DSS GatetoSource Voltage Continuous V 20 V GS GatetoSource Voltage V 30 V GS NonRepetitive (t = 10 s) p G Continuous Drain T = 25C I 63 A D C Steady Current R (Note 1) JC State T = 100C 45 C S Power Dissipation P W T = 25C 107 D Steady C R (Note 1) JC State T = 100C 54 C MARKING DIAGRAM Pulsed Drain Current t = 10 s I 252 A p DM & PIN ASSIGNMENT Operating Junction and Storage Temperature T , 55 to 4 J C T 175 STG Drain 4 Source Current (Body Diode) Pulsed I 63 A S Single Pulse Drainto Source Avalanche EAS 80 mJ Energy (L = 0.1 mH) IAS 40 A TO220AB CASE 221A Lead Temperature for Soldering Purposes 260 C T L NTP5864NG (1/8 from case for 10 s) STYLE 5 AYWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be 1 3 1 assumed, damage may occur and reliability may be affected. 2 Gate Source 3 THERMAL RESISTANCE RATINGS 2 Parameter Symbol Max Units A = Assembly Location Drain JunctiontoCase (Drain) Steady State R 1.4 C/W Y = Year JC (Note 1) WW = Work Week G = PbFree Package JunctiontoAmbient Steady State (Note 1) R 33 C/W JA 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). ORDERING INFORMATION Device Package Shipping NTP5864NG TO220 50 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 1 NTP5864N/DNTP5864N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 58 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 60 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(TH) GS DS D Gate Threshold Temperature V /T 10 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 20 A 10.2 12.4 m DS(on) GS D Forward Transconductance g V = 15 V, I = 20 A 10 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1680 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 189 OSS V = 25 V DS Reverse Transfer Capacitance C 124 RSS nC Total Gate Charge Q 31 G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 10 V, V = 48 V, GS DS I = 20 A D GatetoSource Charge Q 7.3 GS GatetoDrain Charge Q 10 GD Gate Resistance R 0.5 g SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 10 ns d(ON) Rise Time t 6.4 r V = 10 V, V = 48 V, GS DD I = 20 A, R = 2.5 D G TurnOff Delay Time t 18 d(OFF) Fall Time t 4.6 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.94 1.2 V SD J V = 0 V, GS I = 40 A S T = 125C 0.84 J Reverse Recovery Time t 24 ns RR Charge Time t 16 a V = 0 V, dI /dt = 100 A/ s, GS SD I = 20 A S Discharge Time t 7.9 b Reverse Recovery Charge Q 20 nC RR 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2