NTP8G202N Power GaN Cascode Transistor 600 V, 290 m Features Fast Switching Extremely Low Q rr www.onsemi.com Transphorm Inside These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V R TYP (BR)DSS DS(ON) Compliant 600 V 290 m 10 V ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol NDD Unit NChannel MOSFET DraintoSource Voltage V 600 V DSS D (3) GatetoSource Voltage V 18 V GS Continuous Drain Steady T = 25C I 9.0 A C D Current R State JC T = 100C 6.0 C Power Dissipation Steady T = 25C P 65 W C D R State JC G (1) Pulsed Drain t = 10 s I 35 A p DM Current S (2,4) Operating Junction and Storage T , 55 to C J Temperature T +150 STG MARKING DIAGRAM Lead Temperature for Soldering Leads T 260 C L & PIN ASSIGNMENT Stresses exceeding those listed in the Maximum Ratings table may damage the 4 device. If any of these limits are exceeded, device functionality should not be Source 4 assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE Parameter Symbol Value Unit TO220 JunctiontoCase (Drain) R 2.3 C/W JC NTP8G202NG CASE 221A09 JunctiontoAmbient Steady State R 62 C/W AYWW JA STYLE 10 1 1 3 2 3 Gate Drain A = Assembly Location 2 Y = Year Source WW = Work Week G = PbFree Package ORDERING INFORMATION Device Package Shipping NTP8G202NG TO220 50 Units / Rail (PbFree) Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 Rev. 1 NTP8G202N/DNTP8G202N ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V =0V, I =1mA 600 V (BR)DSS GS D DraintoSource Leakage Current I V = 600 V, V =0V T =25C 2.5 90 A DSS DS GS J T = 150C 8.0 J GatetoSource Leakage Current I V = 18 V 100 nA GSS GS ON CHARACTERISTICS (Note 1) Gate Threshold Voltage V V =V , I = 500 A 1.6 2.1 2.6 V GS(TH) DS GS D Static Drain-to-Source On Resistance R V =8V, I = 5.5 A 290 350 m DS(on) GS D DYNAMIC CHARACTERISTICS Input Capacitance C 760 pF iss Output Capacitance C 26 oss V = 400 V, V = 0 V, f = 1 MHz DS GS Reverse Transfer Capacitance C 3.5 rss Effective output capacitance, energy C 36 o(er) V = 0 V, V = 0 to 480 V GS DS related (Note 3) Effective output capacitance, time C I = constant, V = 0 V, 57 o(tr) D GS related (Note 4) V = 0 to 480 V DS Total Gate Charge Q 6.2 9.3 nC g Gate-to-Source Charge Q 2.1 gs V = 100 V, I = 5.5 A, V = 4.5 V DS D GS Gate-to-Drain Charge Q 2.2 gd SWITCHING CHARACTERISTICS (Note 2) Turn-on Delay Time t 6.2 ns d(on) Rise Time t 4.5 r V = 480 V, I = 5.5 A, DD D V =10V, R = 2 GS G Turn-off Delay Time t 9.7 d(off) Fall Time t 5.0 f SOURCEDRAIN DIODE CHARACTERISTICS Diode Forward Voltage V I = 5.5 A, V =0V T =25C 2.1 V SD S GS J Reverse Recovery Time t 12 ns rr V =0V, V = 480 V GS DD I = 5.5 A, d /d = 1500 A/ s S i t Reverse Recovery Charge Q 29 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Width 300 s, Duty Cycle 2%. 2. Switching characteristics are independent of operating junction temperatures. 3. C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS (BR)DSS 4. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V o(tr) oss DS (BR)DSS www.onsemi.com 2