NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 V, 77 A, 14 m Features Low R DS(on) High Current Capability NTB6411AN, NTP6411AN ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage Temper- V /T 113 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 8.6 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 72 A 12.7 14 m DS(on) GS D Forward Transconductance g V = 5 V, I = 10 A 24 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 3700 iss V = 25 V, V = 0 V, DS GS Output Capacitance C 550 oss f = 1 MHz Reverse Transfer Capacitance C 200 rss Total Gate Charge Q 100 nC G(TOT) Threshold Gate Charge Q 4.0 G(TH) V = 10 V, V = 80 V, GS DS GatetoSource Charge Q 16 GS I = 72 A D GatetoDrain Charge Q 47 GD Plateau Voltage V 5.2 V GP Gate Resistance R 3.1 G SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 16 ns d(on) Rise Time t 144 r V = 10 V, V = 80 V, GS DD I = 72 A, R = 6.2 D G Turn Off Delay Time t 107 d(off) Fall Time t 157 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V I = 72 A T = 25C 0.92 1.3 V SD S J T = 125C 0.86 J Reverse Recovery Time t 94 ns rr Charge Time t 64 a V = 0 V, I = 72 A, GS S dI /dt = 100 A/ s S Discharge Time t 30 b Reverse Recovery Charge Q 330 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.