NUP4106 ESD Protection Diode Low Capacitance Surface Mount ESD Protection for HighSpeed Data Interfaces www.onsemi.com The NUP4106 surge protection is designed to protect equipment attached to high speed communication lines from ESD and lightning. SO8 LOW CAPACITANCE Features VOLTAGE SUPPRESSOR SO8 Package 500 WATTS PEAK POWER Peak Power 500 W 8 x 20 S 3.3 VOLTS ESD Rating: IEC 6100042 (ESD) 15 kV (air) 8 kV (contact) UL Flammability Rating of 94 V0 PIN CONFIGURATION AND SCHEMATIC This is a PbFree Device I/O 1 1 8 GND Typical Applications High Speed Communication Line Protection REF 1 2 7 I/O 4 T1/E1 Secondary Protection REF 1 3 6 I/O 3 I/O 2 4 5 GND T3/E3 Secondary Protection Analog Video Protection Base Stations 2 I C Bus Protection SOIC8 8 CASE 751 1 PLASTIC MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation P 500 W MARKING DIAGRAM pk 8 x 20 S T = 25C (Note 1) A 8 Junction and Storage Temperature Range T , T 55 to +150 C J stg P4106 Lead Solder Temperature T 260 C L AYWW Maximum 10 Seconds Duration IEC 6100042 Contact ESD 8 kV 1 Air 15 Stresses exceeding those listed in the Maximum Ratings table may damage the A = Assembly Location device. If any of these limits are exceeded, device functionality should not be Y = Year assumed, damage may occur and reliability may be affected. WW = Work Week 1. Nonrepetitive current pulse 8 x 20 S exponential decay waveform = PbFree Package Pin 2/3 to Pin 5/8 (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NUP4106DR2G SO8 2500/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: October, 2017 Rev. 1 NUP4106/DNUP4106 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage I = 1.0 mA V 5.0 V t BR Reverse Leakage Current V = 3.3 V I N/A 5.0 A RWN R Maximum Clamping Voltage I = 1.0 A, 8 x 20 S V N/A 7.0 V PP C Maximum Clamping Voltage I = 10 A, 8 x 20 S V N/A 10 V PP C Maximum Clamping Voltage I = 25 A, 8 x 20 S V N/A 15 V PP C Between I/O Pins and Ground V = 0 V, 1.0 MHz Capacitance 8.0 15 pF R Between I/O Pins V = 0 Volts, 1.0 MHz Capacitance 4.0 pF R ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T I Forward Current I F PP V Forward Voltage I F F P Peak Power Dissipation UniDirectional pk C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. TYPICAL CHARACTERISTICS 14 100 t PEAK VALUE I 8 s r RSM 90 12 PULSE WIDTH (t ) IS DEFINED P 80 AS THAT POINT WHERE THE 10 70 PEAK CURRENT DECAY = 8 s 60 8 HALF VALUE I /2 20 s RSM 50 6 40 30 4 t P 20 2 10 0 0 020 40 60 80 010 20 30 40 50 PEAK PULSE CURRENT (A) t, TIME ( s) Figure 1. 8 x 20 s Pulse Waveform Figure 2. Clamping Voltage vs. Peak Pulse Current (8 x 20 s Waveform) www.onsemi.com 2 % OF PEAK PULSE CURRENT CLAMPING VOLTAGE (V)