NUP4201MR6T1G ON Semiconductor

M NUP4201MR6 Transient Voltage Suppressors ESD Protection Diodes with Low Clamping Voltage NUP4201MR6 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM V V V C BR RWM V I V I Maximum Reverse Leakage Current V R F R RWM I T V Breakdown Voltage I BR T I Test Current T I Forward Current F I PP V Forward Voltage I F F P Peak Power Dissipation pk UniDirectional TVS C Capacitance V = 0 and f = 1.0 MHz R *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T =25C unless otherwise specified) J Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V (Note 2) 5.0 V RWM Breakdown Voltage V I =1 mA, (Note 3) 6.0 V BR T Reverse Leakage Current I V = 5 V 5.0 A R RWM Clamping Voltage V I = 5 A (Note 4) 12.5 V C PP Clamping Voltage V I = 8 A (Note 4) 20 V C PP Maximum Peak Pulse Current I 25 A 8x20 s Waveform (Note 4) PP Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF J R Junction Capacitance C V = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF J R Clamping Voltage V I = 1 A (Notes 5 and 6) 16.6 V C PP Clamping Voltage V Per IEC 6100042 (Note 7) Figure 1 and 2 V C 2. TVS devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater than the DC RWM or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Nonrepetitive current pulse per Figure 5 (Pin 5 to Pin 2) 5. Nonrepetitive current pulse per FIgure 5 (Any I/O Pins) 6. Surge current waveform per Figure 5. 7. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000 4 2 Negative 8 kV Contact per IEC61000 4 2