NVD4808NT4G ON Semiconductor

NTD4808N, NVD4808N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 63 A Features NTD4808N, NVD4808N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche EAS 144.5 mJ Energy (V = 24 V, V = 10 V, DD GS I = 17 A , L = 1.0 mH, R = 25 L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 2.75 JC JunctiontoTAB (Drain) R 3.5 JC TAB C/W JunctiontoAmbient Steady State (Note 1) R 57 JA JunctiontoAmbient Steady State (Note 2) 107 R JA 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 27 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 V GS(TH) GS DS D Negative Threshold Temperature V /T 5.6 GS(TH) J mV/C Coefficient DraintoSource On Resistance R V = 10 to 11.5 V I = 30 A 6.7 8.0 DS(on) GS D I = 15 A 6.6 m D V = 4.5 V I = 30 A 10.3 12.4 GS D I = 15 A 9.8 D Forward Transconductance g V = 15 V, I = 15 A 11.4 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1538 ISS Output Capacitance C 334 V = 0 V, f = 1 MHz, V = 12 V pF OSS GS DS Reverse Transfer Capacitance C 180 RSS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 s, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.