NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, PChannel TSOP6 Features Ultra Low R DS(on) NTGS3441, NVGS3441 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Notes 4 & 5) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 10 A) 20 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 20 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 20 Vdc, T = 70C) 5.0 GS DS J GateBody Leakage Current I nAdc GSS (V = 8.0 Vdc, V = 0 Vdc) 100 GS DS GateBody Leakage Current I nAdc GSS (V = +8.0 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 0.45 1.05 1.50 DS GS D Static DrainSource OnState Resistance R DS(on) (V = 4.5 Vdc, I = 3.3 Adc) 0.069 0.090 GS D (V = 2.5 Vdc, I = 2.9 Adc) 0.117 0.135 GS D Forward Transconductance g Mhos FS (V = 10 Vdc, I = 3.3 Adc) 6.8 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 480 pF iss (V = 5.0 Vdc, V = 0 Vdc, DS GS Output Capacitance C 265 pF oss f = 1.0 MHz) Reverse Transfer Capacitance C 100 pF rss SWITCHING CHARACTERISTICS TurnOn Delay Time t 13 25 ns d(on) Rise Time t 23.5 45 ns r (V = 20 Vdc, I = 1.6 Adc, DD D V = 4.5 Vdc, R = 6.0 ) GS g Turn Off Delay Time t 27 50 ns d(off) Fall Time t 24 45 ns f Total Gate Charge Q 6.2 14 nC tot (V = 10 Vdc, V = 4.5 Vdc, DS GS GateSource Charge Q 1.3 nC gs I = 3.3 Adc) D GateDrain Charge Q 2.5 nC gd BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I = 1.6 Adc, V = 0 Vdc) V 0.88 1.2 Vdc S GS SD Diode Forward OnVoltage (I = 3.3 Adc, V = 0 Vdc) V 0.98 Vdc S GS SD Reverse Recovery Time (I = 1.6 Adc, dI /dt = 100 A/ s) t 30 60 ns rr S S 4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge are mandatory.