X-On Electronics has gained recognition as a prominent supplier of NVGS3441T1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVGS3441T1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVGS3441T1G ON Semiconductor

NVGS3441T1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NVGS3441T1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET PFET 20V 2.35A 900
Datasheet: NVGS3441T1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.2282
N/A

Obsolete
0
MOQ : 2205
Multiples : 1
2205 : USD 0.1479
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.3342
10 : USD 0.6294
100 : USD 0.3418
500 : USD 0.2689
1000 : USD 0.2073
3000 : USD 0.1888
6000 : USD 0.1765
9000 : USD 0.1601
24000 : USD 0.155
N/A

Obsolete
   
Manufacturer
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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We are delighted to provide the NVGS3441T1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVGS3441T1G and other electronic components in the MOSFETs category and beyond.

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NTGS3441, NVGS3441 Power MOSFET 1 Amp, 20 Volts, PChannel TSOP6 Features Ultra Low R DS(on) NTGS3441, NVGS3441 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Notes 4 & 5) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 10 A) 20 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 20 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 20 Vdc, T = 70C) 5.0 GS DS J GateBody Leakage Current I nAdc GSS (V = 8.0 Vdc, V = 0 Vdc) 100 GS DS GateBody Leakage Current I nAdc GSS (V = +8.0 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 0.45 1.05 1.50 DS GS D Static DrainSource OnState Resistance R DS(on) (V = 4.5 Vdc, I = 3.3 Adc) 0.069 0.090 GS D (V = 2.5 Vdc, I = 2.9 Adc) 0.117 0.135 GS D Forward Transconductance g Mhos FS (V = 10 Vdc, I = 3.3 Adc) 6.8 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 480 pF iss (V = 5.0 Vdc, V = 0 Vdc, DS GS Output Capacitance C 265 pF oss f = 1.0 MHz) Reverse Transfer Capacitance C 100 pF rss SWITCHING CHARACTERISTICS TurnOn Delay Time t 13 25 ns d(on) Rise Time t 23.5 45 ns r (V = 20 Vdc, I = 1.6 Adc, DD D V = 4.5 Vdc, R = 6.0 ) GS g Turn Off Delay Time t 27 50 ns d(off) Fall Time t 24 45 ns f Total Gate Charge Q 6.2 14 nC tot (V = 10 Vdc, V = 4.5 Vdc, DS GS GateSource Charge Q 1.3 nC gs I = 3.3 Adc) D GateDrain Charge Q 2.5 nC gd BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I = 1.6 Adc, V = 0 Vdc) V 0.88 1.2 Vdc S GS SD Diode Forward OnVoltage (I = 3.3 Adc, V = 0 Vdc) V 0.98 Vdc S GS SD Reverse Recovery Time (I = 1.6 Adc, dI /dt = 100 A/ s) t 30 60 ns rr S S 4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge are mandatory.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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