Product Information

NVH4L080N120SC1

NVH4L080N120SC1 electronic component of ON Semiconductor

Datasheet
MOSFET SIC MOS TO247-4L 80MOHM 1200V

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 18.9348 ea
Line Total: USD 18.93

9 - Global Stock
Ships to you between
Tue. 04 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

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NVH4L080N120SC1
ON Semiconductor

1 : USD 18.3522
10 : USD 17.5726
45 : USD 16.217
90 : USD 15.0366

     
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The NVH4L080N120SC1 is an N-channel enhancement-mode silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) designed to operate from a supply voltage of 1200V. The transistor features very low on-resistance (80m?) for minimal conduction losses, high avalanche ruggedness, and low gate charge (Qg) for efficient switching performance. This MOSFET is built in the industry-standard TO-247-4L package and is capable of efficiently switching high currents up to 130A in applications such as DC-DC converters, inverters, motor drives, and industrial power supplies. The device offers superior performance and reliability over standard silicon-based MOSFETs with no compromise on system cost.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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