X-On Electronics has gained recognition as a prominent supplier of NVH4L080N120SC1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVH4L080N120SC1 SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

NVH4L080N120SC1 ON Semiconductor

NVH4L080N120SC1 electronic component of ON Semiconductor
NVH4L080N120SC1 ON Semiconductor
NVH4L080N120SC1 SiC MOSFETs
NVH4L080N120SC1 Semiconductors

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See Product Specifications
Part No. NVH4L080N120SC1
Manufacturer: ON Semiconductor
Category: SiC MOSFETs
Description: SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L
Datasheet: NVH4L080N120SC1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 20.2762 ea
Line Total: USD 20.28 
Availability - 9
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ: 1  Multiples: 1
Pack Size: 1

 NVH4L080N120SC1 More Buying Options & Price Grid(s)

Availability Price Quantity
9
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 1
Multiples : 1
1 : USD 20.2762
10 : USD 17.4049
45 : USD 15.9405
90 : USD 14.6637

Specifications

   
Manufacturer
Product Category
Mounting Style
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NVH4L080N120SC1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVH4L080N120SC1 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The NVH4L080N120SC1 is an N-channel enhancement-mode silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) designed to operate from a supply voltage of 1200V. The transistor features very low on-resistance (80m?) for minimal conduction losses, high avalanche ruggedness, and low gate charge (Qg) for efficient switching performance. This MOSFET is built in the industry-standard TO-247-4L package and is capable of efficiently switching high currents up to 130A in applications such as DC-DC converters, inverters, motor drives, and industrial power supplies. The device offers superior performance and reliability over standard silicon-based MOSFETs with no compromise on system cost.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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