NVH4L080N120SC1 ON Semiconductor

Name: NVH4L080N120SC1
Brand: ON Semiconductor
SKU: NVH4L080N120SC1_ON_Semiconductor
Availability: OutOfStock
Rating: 5 (11 reviews)

NVH4L080N120SC1 electronic component of ON Semiconductor

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X-On Electronics has gained recognition as a prominent supplier of NVH4L080N120SC1 SiC MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVH4L080N120SC1 SiC MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for SiC MOSFETs, ensuring timely deliveries around the world.

Part No.	NVH4L080N120SC1
Manufacturer:	ON Semiconductor
Category:	SiC MOSFETs
Description:	SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 80 mohm, 1200 V, M1, TO247-4L Silicon Carbide MOSFET, N?Channel, 1200 V, 80 m?, TO247?4L
Datasheet:	NVH4L080N120SC1 Datasheet (PDF)

Price (USD)

1: USD 20.9199 ea
Line Total: USD 20.92

Availability : 0

Qty	Unit Price
1	$ 20.9199
10	$ 17.9574
45	$ 16.4466
90	$ 15.1292

NVH4L080N120SC1 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Fri. 26 Sep to Thu. 02 Oct

MOQ : 30
Multiples : 30

Qty	Unit Price
30	$ 25.8055

Availability 0

Ship by Fri. 26 Sep to Thu. 02 Oct

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 20.9199
10	$ 17.9574
45	$ 16.4466
90	$ 15.1292

Availability 0

Ship by Wed. 24 Sep to Fri. 26 Sep

MOQ : 1
Multiples : 1

Qty	Unit Price
1	$ 11.4605
10	$ 9.4729
100	$ 7.8513
250	$ 7.3895
500	$ 6.9174
1000	$ 6.2297
2500	$ 5.9937
5000	$ 5.7679
10000	$ 5.6755

We are delighted to provide the NVH4L080N120SC1 from our SiC MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVH4L080N120SC1 and other electronic components in the SiC MOSFETs category and beyond.

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Additional Infomation About Product

The NVH4L080N120SC1 is an N-channel enhancement-mode silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) designed to operate from a supply voltage of 1200V. The transistor features very low on-resistance (80m?) for minimal conduction losses, high avalanche ruggedness, and low gate charge (Qg) for efficient switching performance. This MOSFET is built in the industry-standard TO-247-4L package and is capable of efficiently switching high currents up to 130A in applications such as DC-DC converters, inverters, motor drives, and industrial power supplies. The device offers superior performance and reliability over standard silicon-based MOSFETs with no compromise on system cost.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer ON Semiconductor ON Semiconductor
Product Category SiC MOSFETs SiC MOSFETs
Mounting Style Through Hole Through Hole
Transistor Polarity N - Channel N - Channel
Number of Channels 1 Channel 1 Channel
Vds - Drain-Source Breakdown Voltage 1.2 kV 1.2 kV
Id - Continuous Drain Current 29 A 29 A
Rds On - Drain-Source Resistance 80 mOhms 80 mOhms
Vgs - Gate-Source Voltage - 15 V , + 25 V - 15 V , + 25 V
Vgs th - Gate-Source Threshold Voltage 4.3 V 4.3 V
Qg - Gate Charge 56 nC 56 nC
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 170 W 170 W
Channel Mode Enhancement Enhancement
Tradename EliteSiC EliteSiC
Package / Case TO - 247 - 4 TO - 247 - 4
Hts Code 8541290095 8541290095

NVH4L080N120SC1 ON Semiconductor

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