NTGS3443, NVGS3443 Power MOSFET 4.4 Amps, 20 Volts PChannel TSOP6 NTGS3443, NVGS3443 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (Notes 4 & 5) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DrainSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 10 A) 20 GS D Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 20 Vdc, T = 25C) 1.0 GS DS J (V = 0 Vdc, V = 20 Vdc, T = 70C) 5.0 GS DS J GateBody Leakage Current I nAdc GSS (V = 12 Vdc, V = 0 Vdc) 100 GS DS GateBody Leakage Current I nAdc GSS (V = +12 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) (V = V , I = 250 Adc) 0.60 0.95 1.50 DS GS D Static DrainSource OnState Resistance R DS(on) (V = 4.5 Vdc, I = 4.4 Adc) 0.058 0.065 GS D (V = 2.7 Vdc, I = 3.7 Adc) 0.082 0.090 GS D (V = 2.5 Vdc, I = 3.5 Adc) 0.092 0.100 GS D Forward Transconductance g mhos FS (V = 10 Vdc, I = 4.4 Adc) 8.8 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 565 pF iss (V = 5.0 Vdc, V = 0 Vdc, DS GS Output Capacitance C 320 pF oss f = 1.0 MHz) Reverse Transfer Capacitance C 120 pF rss SWITCHING CHARACTERISTICS TurnOn Delay Time t 10 25 ns d(on) Rise Time t 18 45 ns r (V = 20 Vdc, I = 1.0 Adc, DD D V = 4.5 Vdc, R = 6.0 ) GS g Turn Off Delay Time t 30 50 ns d(off) Fall Time t 31 50 ns f Total Gate Charge Q 7.5 15 nC tot (V = 10 Vdc, V = 4.5 Vdc, DS GS GateSource Charge Q 1.4 nC gs I = 4.4 Adc) D GateDrain Charge Q 2.9 nC gd BODYDRAIN DIODE RATINGS Diode Forward OnVoltage (I = 1.7 Adc, V = 0 Vdc) V 0.83 1.2 Vdc S GS SD Reverse Recovery Time (I = 1.7 Adc, dI /dt = 100 A/ s) t 30 ns S S rr 4. Indicates Pulse Test: P.W. = 300 sec max, Duty Cycle = 2%. 5. Handling precautions to protect against electrostatic discharge are mandatory.