Product Information

NVJD4152PT1G

NVJD4152PT1G electronic component of ON Semiconductor

Datasheet
MOSFET 2 P Channel (Dual) 20V 880mA 1.2V @ 250uA 260 mΩ @ 880mA,4.5V SC-88 RoHS
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2422 ea
Line Total: USD 0.24

1 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

NVJD4152PT1G
ON Semiconductor

1 : USD 0.2272
10 : USD 0.1887
30 : USD 0.1724
100 : USD 0.1518
500 : USD 0.1427
1000 : USD 0.1372

Read More Specifications

     
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The NVJD4152PT1G is an MOSFET 2 P-Channel Dual device produced by ON Semiconductor. It is rated at 20V, 880mA of current, and has a 1.2V@250uA threshold voltage with a 260mO @ 880mA. This device also has a 4.5V SC-88 and meets the RoHS standards. This versatile device can be used in a variety of systems and applications, such as power management, sensing, and controlled switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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ON
ON SEMI
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OOF
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