NVJD5121NT1G ON Semiconductor

NVJD5121NT1G electronic component of ON Semiconductor
NVJD5121NT1G ON Semiconductor
NVJD5121NT1G MOSFETs
NVJD5121NT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NVJD5121NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVJD5121NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. NVJD5121NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NFET SC88 60V 295MA 1.6OH
Datasheet: NVJD5121NT1G Datasheet (PDF)
Price (USD)
1: USD 0.275 ea
Line Total: USD 0.28 
Availability : 36418
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 0.275
10$ 0.155
100$ 0.1152
3000$ 0.0792
6000$ 0.0737

Availability 3110
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1064
Multiples : 1
QtyUnit Price
1064$ 0.2445
1807$ 0.1439
1842$ 0.1412
2310$ 0.1126
2332$ 0.1115
2376$ 0.1094
2401$ 0.1083
3396$ 0.0765


Availability 53
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.182
50$ 0.178
150$ 0.1312
500$ 0.1162


Availability 36418
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.275
10$ 0.155
100$ 0.1152
3000$ 0.0792
6000$ 0.0737


Availability 48
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 0
QtyUnit Price
1$ 0.378
10$ 0.189
100$ 0.1456
138$ 0.1386
377$ 0.1302
1000$ 0.126


Availability 3110
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 2310
Multiples : 1
QtyUnit Price
2310$ 0.1126
2332$ 0.1115
2376$ 0.1094
2401$ 0.1083
3396$ 0.0765

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVJD5121NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVJD5121NT1G and other electronic components in the MOSFETs category and beyond.

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NTJD5121N, NVJD5121N MOSFET Power, Dual, N-Channel With ESD Protection, SC-88 60 V, 295 mA wwwwww..onsemi.comonsemi.com Features Low R DS(on) V R MAX I Max (BR)DSS DS(on) D Low Gate Threshold 1.6 10 V Low Input Capacitance 295 mA 60 V 2.5 4.5 V ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and SC88 (SOT363) PPAP Capable This is a PbFree Device S 1 6 D 1 1 Applications Low Side Load Switch G 2 5 G 1 2 DCDC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 4 S 2 2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS Top View GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 295 mA MARKING DIAGRAM & A D Current (Note 1) State PIN ASSIGNMENT T = 85C 212 A D1 G2 S2 t 5 s T = 25C 304 A 6 1 T = 85C 219 A XX M SC88/SOT363 Power Dissipation Steady T = 25C P 250 mW A D CASE 419B (Note 1) State STYLE 26 1 t 5 s 266 S1 G1 D2 Pulsed Drain Current t = 10 s I 900 mA p DM XX = Device Code M = Date Code Operating Junction and Storage Temperature T , T 55 to C J STG 150 = PbFree Package (Note: Microdot may be in either location) Source Current (Body Diode) I 210 mA S Lead Temperature for Soldering Purposes 260 C T L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering and shipping information ion page 6 of GateSource ESD Rating (HBM) ESD 2000 V HBM this data sheet. GateSource ESD Rating (MM) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTJD5121N/DNTJD5121N, NVJD5121N Parameter Symbol Value Unit C/W JunctiontoAmbient Steady State R 467 JA JunctiontoAmbient t 5 s R 412 JA JunctiontoLead Steady State R 252 JL 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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