X-On Electronics has gained recognition as a prominent supplier of NVJD5121NT1G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NVJD5121NT1G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NVJD5121NT1G ON Semiconductor

NVJD5121NT1G electronic component of ON Semiconductor
NVJD5121NT1G ON Semiconductor
NVJD5121NT1G MOSFETs
NVJD5121NT1G  Semiconductors

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See Product Specifications
Part No. NVJD5121NT1G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET NFET SC88 60V 295MA 1.6OH
Datasheet: NVJD5121NT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2325 ea
Line Total: USD 0.23 
Availability - 26070
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3110
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 1220
Multiples : 1
1220 : USD 0.2132
1710 : USD 0.1521
1725 : USD 0.1508
2448 : USD 0.1062
2473 : USD 0.1051
2494 : USD 0.1043
2552 : USD 0.1019
3396 : USD 0.0765

33
Ship by Thu. 03 Jul to Tue. 08 Jul
MOQ : 5
Multiples : 5
5 : USD 0.3224
50 : USD 0.2506
150 : USD 0.1649
500 : USD 0.1225
3000 : USD 0.1109
6000 : USD 0.1041

26070
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 0.2325
10 : USD 0.13
100 : USD 0.0972
500 : USD 0.0847
1000 : USD 0.0825
3000 : USD 0.0704
6000 : USD 0.066
9000 : USD 0.0627

194
Ship by Tue. 24 Jun to Thu. 26 Jun
MOQ : 1
Multiples : 1
1 : USD 0.308
10 : USD 0.1582
100 : USD 0.119

29100
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 30000
Multiples : 30000
30000 : USD 0.0745

3110
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 2448
Multiples : 1
2448 : USD 0.1062

8730
Ship by Thu. 26 Jun to Wed. 02 Jul
MOQ : 4637
Multiples : 1
4637 : USD 0.1011
10000 : USD 0.09
100000 : USD 0.0755

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NVJD5121NT1G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NVJD5121NT1G and other electronic components in the MOSFETs category and beyond.

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NTJD5121N, NVJD5121N MOSFET Power, Dual, N-Channel With ESD Protection, SC-88 60 V, 295 mA wwwwww..onsemi.comonsemi.com Features Low R DS(on) V R MAX I Max (BR)DSS DS(on) D Low Gate Threshold 1.6 10 V Low Input Capacitance 295 mA 60 V 2.5 4.5 V ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and SC88 (SOT363) PPAP Capable This is a PbFree Device S 1 6 D 1 1 Applications Low Side Load Switch G 2 5 G 1 2 DCDC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 4 S 2 2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS Top View GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 295 mA MARKING DIAGRAM & A D Current (Note 1) State PIN ASSIGNMENT T = 85C 212 A D1 G2 S2 t 5 s T = 25C 304 A 6 1 T = 85C 219 A XX M SC88/SOT363 Power Dissipation Steady T = 25C P 250 mW A D CASE 419B (Note 1) State STYLE 26 1 t 5 s 266 S1 G1 D2 Pulsed Drain Current t = 10 s I 900 mA p DM XX = Device Code M = Date Code Operating Junction and Storage Temperature T , T 55 to C J STG 150 = PbFree Package (Note: Microdot may be in either location) Source Current (Body Diode) I 210 mA S Lead Temperature for Soldering Purposes 260 C T L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering and shipping information ion page 6 of GateSource ESD Rating (HBM) ESD 2000 V HBM this data sheet. GateSource ESD Rating (MM) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTJD5121N/DNTJD5121N, NVJD5121N Parameter Symbol Value Unit C/W JunctiontoAmbient Steady State R 467 JA JunctiontoAmbient t 5 s R 412 JA JunctiontoLead Steady State R 252 JL 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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