Product Information

NVJD5121NT1G

NVJD5121NT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor MOSFET NFET SC88 60V 295MA 1.6OH

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1085 ea
Line Total: USD 0.11

14862 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14862 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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NVJD5121NT1G
ON Semiconductor

1 : USD 0.1085
10 : USD 0.1075
25 : USD 0.0962
100 : USD 0.0914
250 : USD 0.0864
500 : USD 0.0815
1000 : USD 0.0765
3000 : USD 0.075
6000 : USD 0.075
15000 : USD 0.075

11640 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 3000
Multiples : 3000

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NVJD5121NT1G
ON Semiconductor

3000 : USD 0.0798

29 - WHS 3


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

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NVJD5121NT1G
ON Semiconductor

5 : USD 0.1385
50 : USD 0.1354
150 : USD 0.1335
500 : USD 0.1315

26579 - WHS 4


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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NVJD5121NT1G
ON Semiconductor

1 : USD 0.4255
10 : USD 0.3071
100 : USD 0.138
1000 : USD 0.1058
3000 : USD 0.0828
24000 : USD 0.077
48000 : USD 0.0759

203 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 10
Multiples : 5

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NVJD5121NT1G
ON Semiconductor

10 : USD 0.1664
25 : USD 0.143
100 : USD 0.1261
140 : USD 0.1183
380 : USD 0.1118

14862 - WHS 6


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 100
Multiples : 1

Stock Image

NVJD5121NT1G
ON Semiconductor

100 : USD 0.0914
250 : USD 0.0864
500 : USD 0.0815
1000 : USD 0.0765
3000 : USD 0.075

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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NTJD5121N, NVJD5121N MOSFET Power, Dual, N-Channel With ESD Protection, SC-88 60 V, 295 mA wwwwww..onsemi.comonsemi.com Features Low R DS(on) V R MAX I Max (BR)DSS DS(on) D Low Gate Threshold 1.6 10 V Low Input Capacitance 295 mA 60 V 2.5 4.5 V ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and SC88 (SOT363) PPAP Capable This is a PbFree Device S 1 6 D 1 1 Applications Low Side Load Switch G 2 5 G 1 2 DCDC Converters (Buck and Boost Circuits) MAXIMUM RATINGS (T = 25C unless otherwise stated) J D 3 4 S 2 2 Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS Top View GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 295 mA MARKING DIAGRAM & A D Current (Note 1) State PIN ASSIGNMENT T = 85C 212 A D1 G2 S2 t 5 s T = 25C 304 A 6 1 T = 85C 219 A XX M SC88/SOT363 Power Dissipation Steady T = 25C P 250 mW A D CASE 419B (Note 1) State STYLE 26 1 t 5 s 266 S1 G1 D2 Pulsed Drain Current t = 10 s I 900 mA p DM XX = Device Code M = Date Code Operating Junction and Storage Temperature T , T 55 to C J STG 150 = PbFree Package (Note: Microdot may be in either location) Source Current (Body Diode) I 210 mA S Lead Temperature for Soldering Purposes 260 C T L ORDERING INFORMATION (1/8 from case for 10 s) See detailed ordering and shipping information ion page 6 of GateSource ESD Rating (HBM) ESD 2000 V HBM this data sheet. GateSource ESD Rating (MM) ESD 200 V MM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2019 Rev. 9 NTJD5121N/DNTJD5121N, NVJD5121N Parameter Symbol Value Unit C/W JunctiontoAmbient Steady State R 467 JA JunctiontoAmbient t 5 s R 412 JA JunctiontoLead Steady State R 252 JL 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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