NVMFD5852NL Power MOSFET 40 V, 6.9 m , 44 A, Dual NChannel Logic Level, Dual SO8FL Features Small Footprint (5x6 mm) for Compact Designs NVMFD5852NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 37.3 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A J DSS V = 0 V, GS V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.4 2.4 V GS(TH) GS DS D Negative Threshold Temperature V /T 6.3 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 10 V, I = 20 A 5.3 6.9 m DS(on) GS D V = 4.5 V, I = 20 A 8.7 12 GS D Forward Transconductance g V = 5 V, I = 5 A 24 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1800 pF iss Output Capacitance C 240 V = 0 V, f = 1.0 MHz, V = 25 V oss GS DS Reverse Transfer Capacitance C 180 rss Total Gate Charge Q 20 nC G(TOT) Threshold Gate Charge Q 1.5 G(TH) V = 4.5 V, V = 32 V, GS DS I = 20 A D GatetoSource Charge Q 5.5 GS GatetoDrain Charge Q 10.9 GD Total Gate Charge Q V = 10 V, V = 32V, I = 20 A 36 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 ns d(on) Rise Time t 52 r V = 4.5 V, V = 32 V, GS DS I = 20 A, R = 2.5 D G TurnOff Delay Time t 21 d(off) Fall Time t 13 f TurnOn Delay Time t 12 ns d(on) Rise Time t 8.0 r V = 10 V, V = 32 V, GS DS I = 20 A, R = 2.5 D G TurnOff Delay Time t 27 d(off) Fall Time t 5.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.84 1.1 V J SD V = 0 V, GS I = 20 A S T = 125C 0.69 J Reverse Recovery Time t 22.3 ns RR Charge Time t 12.8 a V = 0 V, d /d = 100 A/ s, GS IS t I = 20 A S Discharge Time t 9.4 b Reverse Recovery Charge Q 15.2 nC RR 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.