NVMFD5875NL MOSFET Power, Dual N-Channel, Logic Level, Dual SO8FL 60 V, 33 m , 22 A www.onsemi.com Features Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(on) D Low Capacitance to Minimize Driver Losses 33 m 10 V NVMFD5875NLWF Wettable Flanks Option for Enhanced Optical 60 V 22 A 45 m 4.5 V Inspection AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free and are RoHS Compliant Dual NChannel D1 D2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS G1 G2 GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 22 A C D S1 S2 rent R (Notes 1, 2, JC T = 100C 15 3, 4) C Steady MARKING DIAGRAM State Power Dissipation T = 25C P 32 W C D D1 D1 R (Notes 1, 2, 3) JC T = 100C 16 C S1 D1 1 G1 D1 5875xx Continuous Drain Cur- T = 25C I 7 A A D DFN8 5x6 S2 D2 rent R (Notes 1 & AYWZZ JA T = 100C 5.8 (SO8FL) 3, 4) A G2 D2 Steady CASE 506BT State D2 D2 Power Dissipation T = 25C P 3.2 W A D R (Notes 1, 3) JA T = 100C 2.2 5875NL = Specific Device Code A for NVMFD5875NL Pulsed Drain Current T = 25C, t = 10 s I 80 A A p DM 5875LW = Specific Device Code for NVMFD5875NLWF Operating Junction and Storage Temperature T , T 55 to C J stg A = Assembly Location +175 Y = Year Source Current (Body Diode) I 19 A S W = Work Week ZZ = Lot Traceability Single Pulse Drain (I = 14.5 A, L = E 10.5 mJ L(pk) AS toSource Avalanche 0.1 mH) Energy (T = 25C, J (I = 6.3 A, L = 40 V = 24 V, V = L(pk) DD GS ORDERING INFORMATION 2 mH) 10 V, R = 25 ) G Device Package Shipping Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) NVMFD5875NLT1G DFN8 1500 / Tape & (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NVMFD5875NLWFT1G DFN8 1500 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) NVMFD5875NLT3G DFN8 5000 / Tape & Parameter Symbol Value Unit (PbFree) Reel C/W JunctiontoCase Steady State (Note 2, 3) R 4.65 JC NVMFD5875NLWFT3G DFN8 5000 / Tape & (PbFree) Reel JunctiontoAmbient Steady State (Note 3) R 47 JA For information on tape and reel specifications, 1. The entire application environment impacts the thermal resistance values shown, including part orientation and tape sizes, please they are not constants and are only valid for the particular conditions noted. refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: July, 2019 Rev. 0 NVMFD5875NL/DNVMFD5875NL 2. Psi ( ) is used as required per JESD51 12 for packages in which substantially less than 100% of the heat flows to single case surface. 2 3. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 4. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. www.onsemi.com 2