NVMFS5832NL Power MOSFET 40 V, 4.2 m , 120 A, Single NChannel Features Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G NVMFS5832NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 34.2 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 1 DSS GS J V = 40 V A DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.4 2.4 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 6.4 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 20 A 3.1 4.2 DS(on) GS D m V = 4.5 V I = 20 A 5.0 6.5 GS D Forward Transconductance g V = 15 V, I = 20 A 21 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2700 ISS Output Capacitance C 360 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 250 RSS Total Gate Charge Q V = 4.5 V, V = 20 V I = 20 A 25 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 20 V I = 20 A 51 G(TOT) GS DS D Threshold Gate Charge Q 2.0 nC G(TH) GatetoSource Charge Q 8.0 GS V = 4.5 V, V = 20 V I = 20 A GS DS D GatetoDrain Charge Q 12.7 GD Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 13 d(ON) Rise Time t 24 r V = 4.5 V, V = 20 V, GS DS ns I = 10 A, R = 1.0 D G Turn Off Delay Time t 27 d(OFF) Fall Time t 8.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.73 1.2 SD J V = 0 V, GS V I = 5 A S T = 125C 0.57 J Reverse Recovery Time t 28.6 RR Charge Time t 14 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 10 A S Discharge Time t 14.5 b Reverse Recovery Charge Q 23.4 nC RR 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.