NVMFS5C612NL MOSFET Power, Single N-Channel 60 V, 1.36 m , 250 A Features www.onsemi.com Small Footprint (5x6 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G V R MAX I MAX (BR)DSS DS(ON) D NVMFS5C612NLWF Wettable Flank Option for Enhanced Optical 1.36 m 10 V 60 V 250 A Inspection 2.3 m 4.5 V AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant D (5,6) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 60 V DSS G (4) GatetoSource Voltage V 20 V GS Continuous Drain T = 25C I 250 A C D Current R JC S (1,2,3) T = 100C 175 (Notes 1, 3) C Steady NCHANNEL MOSFET State Power Dissipation T = 25C P 167 W D C R (Note 1) JC T = 100C 83 C MARKING Continuous Drain T = 25C I 38 A A D DIAGRAM Current R JA T = 100C 27 (Notes 1, 2, 3) D A Steady 1 State S D Power Dissipation T = 25C P 3.8 W A D XXXXXX DFN5 S R (Notes 1 & 2) JA T = 100C 1.9 A AYWZZ (SO8FL) S CASE 488AA Pulsed Drain Current T = 25C, t = 10 s I 900 A G D A p DM STYLE 1 D Operating Junction and Storage Temperature T , T 55 to C J stg +175 XXXXXX = 5C612L XXXXXX = (NVMFS5C612NL) or Source Current (Body Diode) I 164 A S XXXXXX = 612LWF Single Pulse DraintoSource Avalanche E 451 mJ AS XXXXXX = (NVMFS5C612NLWF) Energy (I = 17 A) L(pk) A = Assembly Location Lead Temperature for Soldering Purposes T 260 C Y = Year L (1/8 from case for 10 s) W = Work Week ZZ = Lot Traceability Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION THERMAL RESISTANCE MAXIMUM RATINGS See detailed ordering, marking and shipping information in the Parameter Symbol Value Unit package dimensions section on page 5 of this data sheet. C/W JunctiontoCase Steady State R 0.9 JC JunctiontoAmbient Steady State (Note 2) R 39 JA 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2019 Rev. 6 NVMFS5C612NL/DNVMFS5C612NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS GS D DraintoSource Breakdown Voltage V / 12.7 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25 C 10 DSS GS J V = 60 V A DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 16 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 1.2 2.0 V GS(TH) GS DS D Threshold Temperature Coefficient V /T 5.76 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 50 A 1.13 1.36 DS(on) GS D m V = 4.5 V I = 50 A 1.65 2.3 GS D Forward Transconductance g V = 15 V, I = 50 A 151 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 6660 ISS Output Capacitance C 2953 V = 0 V, f = 1 MHz, V = 25 V pF OSS GS DS Reverse Transfer Capacitance C 45 RSS Total Gate Charge Q V = 4.5 V, V = 30 V I = 50 A 41 G(TOT) GS DS D Total Gate Charge Q V = 10 V, V = 30 V I = 50 A 91 G(TOT) GS DS D Threshold Gate Charge Q 5 nC G(TH) GatetoSource Charge Q 17.1 GS V = 4.5 V, V = 30 V I = 50 A GS DS D GatetoDrain Charge Q 10.9 GD Plateau Voltage V 2.9 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 19 d(ON) Rise Time t 51 r V = 4.5 V, V = 30 V, GS DS ns I = 50 A, R = 1.0 D G TurnOff Delay Time t 47 d(OFF) Fall Time t 18 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.78 1.2 SD J V = 0 V, GS V I = 50 A S T = 125C 0.66 J Reverse Recovery Time t 78 RR Charge Time t 36 ns a V = 0 V, dIS/dt = 100 A/ s, GS I = 50 A S Discharge Time t 42 b Reverse Recovery Charge Q 105 nC RR 4. Pulse Test: pulse width 300 s, duty cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2