Product Information

NVMS10P02R2G

NVMS10P02R2G electronic component of ON Semiconductor

Datasheet
TRANS MOSFET N-CH 30V 9A 8-PIN SOIC N T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2466: USD 0.1688 ea
Line Total: USD 416.26

0 - Global Stock
MOQ: 2466  Multiples: 2466
Pack Size: 2466
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 494
Multiples : 494

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NVMS10P02R2G
ON Semiconductor

494 : USD 0.7615

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2466
Multiples : 2466

Stock Image

NVMS10P02R2G
ON Semiconductor

2466 : USD 0.1688

     
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NTMS5P02, NVMS5P02 Power MOSFET -5.4 Amps, -20 Volts PChannel EnhancementMode Single SOIC8 Package NTMS5P02, NVMS5P02 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit DraintoSource Voltage V 20 V DSS DraintoGate Voltage (R = 1.0 m ) V 20 V DGR GS GatetoSource Voltage Continuous V 10 V GS Thermal Resistance JunctiontoAmbient (Note 1) R 50 C/W JA Total Power Dissipation T = 25C P 2.5 W A D Continuous Drain Current 25C I 7.05 A D Continuous Drain Current 70C I 5.62 A D Maximum Operating Power Dissipation P 1.2 W D Maximum Operating Drain Current I 4.85 A D Pulsed Drain Current (Note 4) I 28 A DM Thermal Resistance JunctiontoAmbient (Note 2) R 85 C/W JA Total Power Dissipation T = 25C P 1.47 W A D Continuous Drain Current 25C I 5.40 A D Continuous Drain Current 70C I 4.30 A D Maximum Operating Power Dissipation P 0.7 W D Maximum Operating Drain Current 3.72 A I D Pulsed Drain Current (Note 4) 20 A I DM Thermal Resistance JunctiontoAmbient (Note 3) R 159 C/W JA Total Power Dissipation T = 25C P 0.79 W A D Continuous Drain Current 25C I 3.95 A D Continuous Drain Current 70C I 3.15 A D Maximum Operating Power Dissipation P 0.38 W D Maximum Operating Drain Current I 2.75 A D Pulsed Drain Current (Note 4) I 12 A DM Operating and Storage Temperature Range T , T 55 to +150 C J stg Single Pulse DraintoSource Avalanche Energy Starting T = 25C E 360 mJ J AS (V = 20 Vdc, V = 5.0 Vdc, Peak I = 8.5 Apk, L = 10 mH, R = 25 ) DD GS L G Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds T 260 C L Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t 10 seconds. 2. Mounted onto a 2 square FR4 Board (1 sq. 2 oz Cu 0.06 thick single sided), t = steady state. 3. Minimum FR4 or G10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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