NXH100B120H3Q0PTG

DATA SHEET www.onsemi.com Dual Boost Power Module NXH100B120H3Q0, NXH100B120H3Q0PG-R The NXH100B120H3Q0 is a power module containing a dual boost Q0BOOST Q0BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide CASE 180AJ CASE 180BF lower conduction losses and switching losses, enabling designers to SOLDER PINS PRESSFIT PINS achieve high efficiency and superior reliability. Features MARKING DIAGRAM 1200 V Ultra Field Stop IGBTs Low Reverse Recovery and Fast Switching SiC Diodes NXH100B120H3Q0xxG 1600 V Bypass and Antiparallel Diodes ATYYWW Low Inductive Layout xx = P, PT, S or ST Solderable Pins or PressFit Pins YYWW = Year and Work Week Code Thermistor A = Assembly Site Code T = Test Site Code Options with PreApplied Thermal Interface Material (TIM) and G = PbFree Package Without PreApplied TIM Typical Applications PIN CONNECTIONS Solar Inverter Uninterruptible Power Supplies Energy Storage Systems ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Figure 1. NXH100B120H3Q0xG/PG R Schematic Diagram Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2022 Rev. 7 NXH100B120H3Q0/DNXH100B120H3Q0, NXH100B120H3Q0PG R ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25C Unless Otherwise Noted J Rating Symbol Value Unit BOOST IGBT CollectorEmitter Voltage V 1200 V CES V V GateEmitter Voltage 20 GE Continuous Collector Current T 80C (T = 175C) I 61 A C < J C1 Continuous Collector Current T 102C (T = 175C) I 50 A C < J C2 Pulsed Collector Current (T = 175C) I 150 A J Cpulse Maximum Power Dissipation T = 80C (T = 175C) P 186 W C J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX BOOST DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T 80C (T = 175C) I 34 A C < J F1 Continuous Forward Current T 132C (T = 175C) I 20 A C < J F2 Maximum Power Dissipation T = 80C (T = 175C) P 114 W C J tot Surge Forward Current (60 Hz single halfsine wave) I 185 A FSM 2 2 2 I t value (60 Hz single halfsine wave) I t 142 A s Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX BYPASS DIODE / IGBT PROTECTION DIODE Peak Repetitive Reverse Voltage V 1600 V RRM Continuous Forward Current T 80C (T = 175C) I 58 A C < J F1 Continuous Forward Current T 141C (T = 175C) I 25 A C < J F2 Repetitive Peak Forward Current (T = 175C, t limited by T ) I 75 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 91 W C J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX THERMAL PROPERTIES Storage Temperature range T 40 to 125 C stg INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 60 Hz V 3000 VRMS is Creepage distance 12.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Module Operating Junction Temperature T 40 150 C J Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2