X-On Electronics has gained recognition as a prominent supplier of NXH100B120H3Q0STG IGBT Modules across the USA, India, Europe, Australia, and various other global locations. NXH100B120H3Q0STG IGBT Modules are a product manufactured by ON Semiconductor. We provide cost-effective solutions for IGBT Modules, ensuring timely deliveries around the world.

NXH100B120H3Q0STG ON Semiconductor

NXH100B120H3Q0STG electronic component of ON Semiconductor
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See Product Specifications
Part No.NXH100B120H3Q0STG
Manufacturer: ON Semiconductor
Category: IGBT Modules
Description: IGBT Modules PIM 60-80KW Q0BOOST-L57 1200V 100A SOLDER PIN TIM
Datasheet: NXH100B120H3Q0STG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 81.9748 ea
Line Total: USD 81.97 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 24
Multiples : 24
24 : USD 98.2107

0
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 81.9748
10 : USD 77.8931
24 : USD 75.8203

   
Manufacturer
Product Category
Product
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Maximum Operating Temperature
Minimum Operating Temperature
Packaging
Pd - Power Dissipation
Package / Case
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NXH100B120H3Q0STG from our IGBT Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NXH100B120H3Q0STG and other electronic components in the IGBT Modules category and beyond.

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DATA SHEET www.onsemi.com Dual Boost Power Module NXH100B120H3Q0, NXH100B120H3Q0PG-R The NXH100B120H3Q0 is a power module containing a dual boost Q0BOOST Q0BOOST stage. The integrated field stop trench IGBTs and SiC Diodes provide CASE 180AJ CASE 180BF lower conduction losses and switching losses, enabling designers to SOLDER PINS PRESSFIT PINS achieve high efficiency and superior reliability. Features MARKING DIAGRAM 1200 V Ultra Field Stop IGBTs Low Reverse Recovery and Fast Switching SiC Diodes NXH100B120H3Q0xxG 1600 V Bypass and Antiparallel Diodes ATYYWW Low Inductive Layout xx = P, PT, S or ST Solderable Pins or PressFit Pins YYWW = Year and Work Week Code Thermistor A = Assembly Site Code T = Test Site Code Options with PreApplied Thermal Interface Material (TIM) and G = PbFree Package Without PreApplied TIM Typical Applications PIN CONNECTIONS Solar Inverter Uninterruptible Power Supplies Energy Storage Systems ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Figure 1. NXH100B120H3Q0xG/PG R Schematic Diagram Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: January, 2022 Rev. 7 NXH100B120H3Q0/DNXH100B120H3Q0, NXH100B120H3Q0PG R ABSOLUTE MAXIMUM RATINGS (Note 1) T = 25C Unless Otherwise Noted J Rating Symbol Value Unit BOOST IGBT CollectorEmitter Voltage V 1200 V CES V V GateEmitter Voltage 20 GE Continuous Collector Current T 80C (T = 175C) I 61 A C < J C1 Continuous Collector Current T 102C (T = 175C) I 50 A C < J C2 Pulsed Collector Current (T = 175C) I 150 A J Cpulse Maximum Power Dissipation T = 80C (T = 175C) P 186 W C J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX BOOST DIODE Peak Repetitive Reverse Voltage V 1200 V RRM Continuous Forward Current T 80C (T = 175C) I 34 A C < J F1 Continuous Forward Current T 132C (T = 175C) I 20 A C < J F2 Maximum Power Dissipation T = 80C (T = 175C) P 114 W C J tot Surge Forward Current (60 Hz single halfsine wave) I 185 A FSM 2 2 2 I t value (60 Hz single halfsine wave) I t 142 A s Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX BYPASS DIODE / IGBT PROTECTION DIODE Peak Repetitive Reverse Voltage V 1600 V RRM Continuous Forward Current T 80C (T = 175C) I 58 A C < J F1 Continuous Forward Current T 141C (T = 175C) I 25 A C < J F2 Repetitive Peak Forward Current (T = 175C, t limited by T ) I 75 A J p Jmax FRM Maximum Power Dissipation T = 80C (T = 175C) P 91 W C J tot Minimum Operating Junction Temperature T 40 C JMIN Maximum Operating Junction Temperature T 150 C JMAX THERMAL PROPERTIES Storage Temperature range T 40 to 125 C stg INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 60 Hz V 3000 VRMS is Creepage distance 12.7 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit Module Operating Junction Temperature T 40 150 C J Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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