Product Information

NYC228STT1G

NYC228STT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor SCRs SENSITIVE GATE SCR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5923 ea
Line Total: USD 0.59

4840 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4839 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

NYC228STT1G
ON Semiconductor

1 : USD 0.5923
10 : USD 0.498
100 : USD 0.3531
500 : USD 0.2829
1000 : USD 0.2208
2000 : USD 0.2036
10000 : USD 0.2024
25000 : USD 0.199
50000 : USD 0.1955

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Height
Length
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Thyristors Surface Mount 400V 600V > NYC222, NYC226, NYC228 Pb NYC222, NYC226, NYC228 Description Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. Features Blocking Voltage to 600 V Low-Cost Surface Mount SOT223 Package High Surge Current 15 A These are PbFree Very Low Forward On Devices Voltage at High Current Pin Out Functional Diagram 4 MT 1 MT 2 G 3 1 2 Additional Information Samples Datasheet Resources 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19Thyristors Surface Mount 400V 600V > NYC222, NYC226, NYC228 Maximum Ratings (T = 25C unless otherwise noted) J Rating Symbol Value Unit NYC222 50 Peak Repetitive OffState Voltage (Note 1) NYC226 V , 400 V DRM (R = I , T 40 to +110C, Sine Wave, 50 to 60 Hz) GK K J NYC228 V 600 RRM On-State RMS Current (180 Conduction Angles T = 80C) I 1.5 A C T (RMS) Average OnState Current, (T = 65C, f = 60 Hz, Time = 1 sec) I 2.0 A C T (RMS) Peak Non-repetitive Surge Current, I 15 A TSM T = 25C, (1/2 Cycle, Sine Wave, 60 Hz) A 2 Circuit Fusing Considerations (t = 8.3 ms) I t 0.9 A2s Forward Peak Gate Power (Pulse Width 1.0 sec, T = 25C) P 0.5 W A GM Forward Average Gate Power (t = 8.3 msec, T = 25C) P 0.1 W A GM (AV) Forward Peak Gate Current (Pulse Width 1.0 s, T = 25C) I 0.2 A A FGM Reverse Peak Gate Voltage (Pulse Width 1.0 s, T = 25C) V 5.0 V A RGM Operating Junction Temperature Range Rated V and V T -40 to +110 C RRM DRM J Storage Temperature Range T -40 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V and V for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage however, positive gate voltage shall not be applied concurrent with negative DRM RRM potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, JunctiontoAmbient PCB Mounted R 156 mW 8JA Thermal Resistance, JunctiontoTab Measured on MT2 Tab Adjacent R 25 C/W 8JT to Epoxy Maximum Device Temperature for Soldering Purposes for T 260 C L 10 Secs Maximum Electrical Characteristics - OFF (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit - - 1.0 A Peak Repetitive Blocking Current T = 25C I , J DRM (V = V = V Gate Open) T = 110C I AK DRM RRM J RRM - - 200 mA Electrical Characteristics - ON (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 2) (I = 2.2 A Peak) V 1.2 1.7 V TM TM T = 25C 30 200 HGate Trigger Current (Note 3) C I A GT (V = 12 V, R = 100 , T = 25C) D L C T =40C 500 C T = 25C 0.8 Gate Trigger Voltage (dc) (Note 3) C V V GT (V = 7 Vdc, R = 100) AK L T =40C 1.2 C Gate NonTrigger Voltage T = 110C V 0.1 V C GD (V = V , R = 100 ) AK DRM L Holding Current T = 25C 2.0 5.0 C (V = 12 V, R = 1000 ) I V AK GK H T =40C 10 Initiating Current = 200 mA C 2019 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 07/25/19

Tariff Desc

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