QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode August 2008 QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode Features Description PACKAGE DIMENSIONS = 880nm The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 Chip material = AlGaAs package. Package type: T-1 (3mm) Matched photosensor: QSC112/QSC113/QSC114 Narrow emission angle, 8 at 80% intensity High output power Package material and color: clear, purple tinted, plastic Package Dimensions 0.116 (2.95) REFERENCE SURFACE 0.193 (4.90) 0.052 (1.32) 0.032 (0.082) 0.030 (0.76) NOM 0.800 (20.3) MIN CATHODE 0.050 (1.27) 0.100 (2.54) NOM Schematic 0.155 (3.94) ANODE 0.018 (0.46) SQ. (2x) CATHODE Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is 0.10 (0.25) on all non-nominal dimensions unless otherwise specified. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com QEC121, QEC122, QEC123 Rev. 1.0.1QEC121, QEC122, QEC123 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (T = 25C unless otherwise specified) A Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Rating Units T Operating Temperature -40 to +100 C OPR T Storage Temperature -40 to +100 C STG (2)(3)(4) T Soldering Temperature (Iron) 240 for 5 sec C SOL-I (2)(3) Soldering Temperature (Flow) 260 for 10 sec C T SOL-F I Continuous Forward Current 50 mA F V Reverse Voltage 5 V R (1) Power Dissipation 100 mW P D Notes: 1. Derate power dissipation linearly 1.33mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16 (1.6mm) minimum from housing. Electrical / Optical Characteristics (T = 25C) A Symbol Parameter Test Conditions Min. Typ. Max. Units Peak Emission Wavelength I = 100mA 890 nm PE F Temperature Coefcient 0.2 nm / C TC 1 2 /2 Emission Angle I = 100mA 18 F Forward Voltage I = 100mA, tp = 20ms 1.7 V V F F Temperature Coefcient -6 mV / C TC VF I Reverse Current V = 5V 10 A R R Radiant Intensity QEC121 I = 100mA, tp = 20ms 14 mW/sr I E F Radiant Intensity QEC122 I = 100mA, tp = 20ms 27 94 mW/sr I E F I Radiant Intensity QEC123 I = 100mA, tp = 20ms 39 45 mW/sr E F Temperature Coefcient -0.3 % / C TC IE Rise Time I = 100mA 900 ns t r F t Fall Time 800 ns f Junction Capacitance V = 0V 11 pF C j R 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com QEC121, QEC122, QEC123 Rev. 1.0.1 2