BAS70-04L Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features 70 VOLTS SCHOTTKY Extremely Fast Switching Speed BARRIER DIODE Low Forward Voltage S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and ANODE CATHODE PPAP Capable 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 CATHODE/ANODE Compliant 3 MAXIMUM RATINGS (T = 150C unless otherwise noted) J Rating Symbol Value Unit 1 2 Forward Current I 70 mA F SOT23 (TO236) NonRepetitive Peak Forward Surge I 100 mA FSM CASE 318 Current (t 1.0 s) STYLE 11 Reverse Voltage V 70 V R THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Forward Power Dissipation P F CG M T = 25C 225 mW A Derate above 25C 1.8 mW/C 1 Thermal Resistance JunctiontoAmbient R C/W JA (Note 1) 508 CG = Specific Device Code (Note 2) 311 M = Date Code* = PbFree Package Operating Junction and Storage T , T 55 to C J stg Temperature Range +150 (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Stresses exceeding those listed in the Maximum Ratings table may damage the vary depending upon manufacturing location. device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR4 minimum pad. 2. FR4 1.0 x 1.0 in pad. ORDERING INFORMATION Device Package Shipping BAS7004LT1G SOT23 3000 / Tape & (PbFree) Reel SBAS7004LT1G SOT23 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1997 1 Publication Order Number: November, 2018 Rev. 13 BAS7004LT1/DBAS7004L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 70 R Total Capacitance C pF T (V = 0 V, f = 1.0 MHz) 2.0 R Reverse Leakage I A R (V = 50 V) 0.1 R (V = 70 V) 10 R Forward Voltage V mV F (I = 1.0 mA) 410 F (I = 10 mA) 750 F (I = 15 mA) 1000 F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 100 100 T = 150C A 10 125C 10 1.0 85C 0.1 1.0 150C 1 25C 0.01 - 40C 85C 25C 25C - 55C 0.1 0.001 25 45 50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5.0 10 15 20 30 35 40 V , REVERSE VOLTAGE (VOLTS) R V , FORWARD VOLTAGE (VOLTS) F Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse Voltage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5.0 10 15 20 25 30 35 40 45 50 V , REVERSE VOLTAGE (VOLTS) R Figure 3. Typical Capacitance www.onsemi.com 2 I , FORWARD CURRENT (mA) F C , CAPACITANCE (pF) T I , REVERSE CURRENT (A) R