SBC807-25WT1G ON Semiconductor

SBC807-25WT1G electronic component of ON Semiconductor
SBC807-25WT1G ON Semiconductor
SBC807-25WT1G Bipolar Transistors - BJT
SBC807-25WT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SBC807-25WT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SBC807-25WT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. SBC807-25WT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 45 V 500 mA 100MHz 460 mW Surface Mount SC-70-3 (SOT323)
Datasheet: SBC807-25WT1G Datasheet (PDF)
Price (USD)
7752: USD 0.0605 ea
Line Total: USD 469 
Availability : 17460
  
Ship by Wed. 19 Nov to Tue. 25 Nov
QtyUnit Price
7752$ 0.0605
10000$ 0.0539
100000$ 0.0451

Availability 8476
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 4797
Multiples : 1
QtyUnit Price
4797$ 0.0542


Availability 20272
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 1861
Multiples : 1
QtyUnit Price
1861$ 0.1397
2963$ 0.0878
2995$ 0.0868
3160$ 0.0823
3345$ 0.0777
3559$ 0.0731
3796$ 0.0685
4066$ 0.0639
6000$ 0.0593
15000$ 0.0526


Availability 20272
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 3160
Multiples : 1
QtyUnit Price
3160$ 0.0823
3345$ 0.0777
3559$ 0.0731
3796$ 0.0685
4066$ 0.0639
6000$ 0.0593
15000$ 0.0526


Availability 17460
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 7752
Multiples : 1
QtyUnit Price
7752$ 0.0605
10000$ 0.0539
100000$ 0.0451


Availability 8476
Ship by Wed. 19 Nov to Tue. 25 Nov
MOQ : 4797
Multiples : 1
QtyUnit Price
4797$ 0.0542

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SBC807-25WT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SBC807-25WT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807-25W, BC807-40W General Purpose Transistors PNP Silicon BC80725W, BC80740W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C CollectorEmitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C EmitterBase Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB J ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC80725, SBC80725 160 400 C CE BC80740, SBC80740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE CollectorEmitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B BaseEmitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC80725WT1G 3000 / Tape & Reel SC70 SBC80725T1G* 5B (PbFree) BC80725WT3G 10,000 / Tape & Reel BC80740WT1G 3000 / Tape & Reel SC70 SBC80740WT1G* 5C (PbFree) BC80740WT3G 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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