SBC807-40WT1G ON Semiconductor

SBC807-40WT1G electronic component of ON Semiconductor
SBC807-40WT1G ON Semiconductor
SBC807-40WT1G Bipolar Transistors - BJT
SBC807-40WT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SBC807-40WT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SBC807-40WT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. SBC807-40WT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT SS GP XSTR PNP 45V
Datasheet: SBC807-40WT1G Datasheet (PDF)
Price (USD)
5334: USD 0.0488 ea
Line Total: USD 260.3 
Availability : 10669
  
Ship by Fri. 29 Aug to Thu. 04 Sep
QtyUnit Price
5334$ 0.0488
6212$ 0.0418

Availability 28409
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 1861
Multiples : 1
QtyUnit Price
1861$ 0.1397
2924$ 0.0889
2986$ 0.0871
4425$ 0.0588
4475$ 0.0581
4619$ 0.0563
4762$ 0.0546
4927$ 0.0528
6000$ 0.051
15000$ 0.0474


Availability 10669
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 5334
Multiples : 1
QtyUnit Price
5334$ 0.0488
6212$ 0.0418


Availability 7359
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.325
10$ 0.1988
100$ 0.1236
500$ 0.0858
1000$ 0.077
3000$ 0.0638
6000$ 0.0572
9000$ 0.0484
24000$ 0.0462


Availability 1394
Ship by Wed. 27 Aug to Fri. 29 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.308
10$ 0.2282
50$ 0.1658
100$ 0.1435
245$ 0.0784
673$ 0.0741
6000$ 0.0713


Availability 28409
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 4425
Multiples : 1
QtyUnit Price
4425$ 0.0588
4475$ 0.0581
4619$ 0.0563
4762$ 0.0546
4927$ 0.0528
6000$ 0.051
15000$ 0.0474


Availability 10669
Ship by Fri. 29 Aug to Thu. 04 Sep
MOQ : 6212
Multiples : 1
QtyUnit Price
6212$ 0.0418

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SBC807-40WT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SBC807-40WT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC807-25W, BC807-40W General Purpose Transistors PNP Silicon BC80725W, BC80740W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 45 V (BR)CEO (I = 10 mA) C CollectorEmitter Breakdown Voltage V 50 V (BR)CES (V = 0, I = 10 A) EB C EmitterBase Breakdown Voltage V 5.0 V (BR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB J ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC80725, SBC80725 160 400 C CE BC80740, SBC80740 250 600 (I = 500 mA, V = 1.0 V) 40 C CE CollectorEmitter Saturation Voltage V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B BaseEmitter On Voltage V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package Shipping BC80725WT1G 3000 / Tape & Reel SC70 SBC80725T1G* 5B (PbFree) BC80725WT3G 10,000 / Tape & Reel BC80740WT1G 3000 / Tape & Reel SC70 SBC80740WT1G* 5C (PbFree) BC80740WT3G 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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